Example of IEEE Electron Device Letters format
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Example of IEEE Electron Device Letters format Example of IEEE Electron Device Letters format Example of IEEE Electron Device Letters format Example of IEEE Electron Device Letters format Example of IEEE Electron Device Letters format Example of IEEE Electron Device Letters format Example of IEEE Electron Device Letters format
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Example of IEEE Electron Device Letters format Example of IEEE Electron Device Letters format Example of IEEE Electron Device Letters format Example of IEEE Electron Device Letters format Example of IEEE Electron Device Letters format Example of IEEE Electron Device Letters format Example of IEEE Electron Device Letters format
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This content is only for preview purposes. The original open access content can be found here.
open access Open Access

IEEE Electron Device Letters — Template for authors

Publisher: IEEE
Categories Rank Trend in last 3 yrs
Electrical and Electronic Engineering #85 of 693 down down by 11 ranks
Electronic, Optical and Magnetic Materials #37 of 246 down down by 8 ranks
journal-quality-icon Journal quality:
High
calendar-icon Last 4 years overview: 1698 Published Papers | 13389 Citations
indexed-in-icon Indexed in: Scopus
last-updated-icon Last updated: 07/07/2020
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Related Journals

open access Open Access

IEEE

Quality:  
High
CiteRatio: 5.5
SJR: 0.81
SNIP: 1.008
open access Open Access
recommended Recommended

Springer

Quality:  
High
CiteRatio: 15.9
SJR: 3.473
SNIP: 2.052
open access Open Access

IEEE

Quality:  
High
CiteRatio: 4.4
SJR: 0.732
SNIP: 1.305

Journal Performance & Insights

CiteRatio

SCImago Journal Rank (SJR)

Source Normalized Impact per Paper (SNIP)

A measure of average citations received per peer-reviewed paper published in the journal.

Measures weighted citations received by the journal. Citation weighting depends on the categories and prestige of the citing journal.

Measures actual citations received relative to citations expected for the journal's category.

7.9

7% from 2019

CiteRatio for IEEE Electron Device Letters from 2016 - 2020
Year Value
2020 7.9
2019 7.4
2018 6.3
2017 6.1
2016 5.9
graph view Graph view
table view Table view

1.337

4% from 2019

SJR for IEEE Electron Device Letters from 2016 - 2020
Year Value
2020 1.337
2019 1.397
2018 1.283
2017 1.361
2016 1.373
graph view Graph view
table view Table view

1.582

3% from 2019

SNIP for IEEE Electron Device Letters from 2016 - 2020
Year Value
2020 1.582
2019 1.633
2018 1.487
2017 1.685
2016 1.607
graph view Graph view
table view Table view

insights Insights

  • CiteRatio of this journal has increased by 7% in last years.
  • This journal’s CiteRatio is in the top 10 percentile category.

insights Insights

  • SJR of this journal has decreased by 4% in last years.
  • This journal’s SJR is in the top 10 percentile category.

insights Insights

  • SNIP of this journal has decreased by 3% in last years.
  • This journal’s SNIP is in the top 10 percentile category.
IEEE Electron Device Letters

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IEEE

IEEE Electron Device Letters

IEEE Electron Device Letters comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy source...... Read More

Engineering

i
Last updated on
06 Jul 2020
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ISSN
0741-3106
i
Impact Factor
High - 2.099
i
Open Access
No
i
Sherpa RoMEO Archiving Policy
Green faq
i
Plagiarism Check
Available via Turnitin
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Endnote Style
Download Available
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Bibliography Name
IEEEtran
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Citation Type
Numbered
[25]
i
Bibliography Example
C. W. J. Beenakker, “Specular andreev reflection in graphene,” Phys. Rev. Lett., vol. 97, no. 6, p.

Top papers written in this journal

Journal Article DOI: 10.1109/EDL.1981.25367
High-performance heat sinking for VLSI
David B. Tuckerman1, Roger Fabian W. Pease1

Abstract:

The problem of achieving compact, high-performance forced liquid cooling of planar integrated circuits has been investigated. The convective heat-transfer coefficient h between the substrate and the coolant was found to be the primary impediment to achieving low thermal resistance. For laminar flow in confined channels, h sca... The problem of achieving compact, high-performance forced liquid cooling of planar integrated circuits has been investigated. The convective heat-transfer coefficient h between the substrate and the coolant was found to be the primary impediment to achieving low thermal resistance. For laminar flow in confined channels, h scales inversely with channel width, making microscopic channels desirable. The coolant viscosity determines the minimum practical channel width. The use of high-aspect ratio channels to increase surface area will, to an extent, further reduce thermal resistance. Based on these considerations, a new, very compact, water-cooled integral heat sink for silicon integrated circuits has been designed and tested. At a power density of 790 W/cm2, a maximum substrate temperature rise of 71°C above the input water temperature was measured, in good agreement with theory. By allowing such high power densities, the heat sink may greatly enhance the feasibility of ultrahigh-speed VLSI circuits. read more read less

Topics:

Heat sink (60%)60% related to the paper, Thermal resistance (60%)60% related to the paper, Computer cooling (56%)56% related to the paper, Coolant (55%)55% related to the paper, Integrated circuit (51%)51% related to the paper
4,214 Citations
Journal Article DOI: 10.1109/LED.2007.901273
Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec
Woo Young Choi1, Byung-Gook Park2, Jong Duk Lee2, Tiehui Liu1

Abstract:

We have demonstrated a 70-nm n-channel tunneling field-effect transistor (TFET) which has a subthreshold swing (SS) of 52.8 mV/dec at room temperature. It is the first experimental result that shows a sub-60-mV/dec SS in the silicon-based TFETs. Based on simulation results, the gate oxide and silicon-on-insulator layer thickn... We have demonstrated a 70-nm n-channel tunneling field-effect transistor (TFET) which has a subthreshold swing (SS) of 52.8 mV/dec at room temperature. It is the first experimental result that shows a sub-60-mV/dec SS in the silicon-based TFETs. Based on simulation results, the gate oxide and silicon-on-insulator layer thicknesses were scaled down to 2 and 70 nm, respectively. However, the ON/ OFF current ratio of the TFET was still lower than that of the MOSFET. In order to increase the on current further, the following approaches can be considered: reduction of effective gate oxide thickness, increase in the steepness of the gradient of the source to channel doping profile, and utilization of a lower bandgap channel material read more read less

Topics:

Tunnel field-effect transistor (66%)66% related to the paper, Gate oxide (60%)60% related to the paper, MOSFET (54%)54% related to the paper, Field-effect transistor (53%)53% related to the paper
1,583 Citations
Journal Article DOI: 10.1109/55.877205
NROM: A novel localized trapping, 2-bit nonvolatile memory cell

Abstract:

This paper presents a novel flash memory cell based on localized charge trapping in a dielectric layer and on a new read operation. It is based on the storage of a nominal /spl sim/400 electrons above a n/sup +//p junction. Programming is performed by channel hot electron injection and erase by tunneling enhanced hot hole inj... This paper presents a novel flash memory cell based on localized charge trapping in a dielectric layer and on a new read operation. It is based on the storage of a nominal /spl sim/400 electrons above a n/sup +//p junction. Programming is performed by channel hot electron injection and erase by tunneling enhanced hot hole injection. The new read methodology is very sensitive to the location of trapped charge above the source. This single device cell has a two physical bit storage capability. The cell shows improved erase performances, no over erase and erratic bit issues, very good retention at 250/spl deg/C, and endurance up to 1M cycles. Only four masks are added to a standard CMOS process to implement a virtual ground array. In a typical 0.35 /spl mu/m process, the area of a bit is 0.315 /spl mu/m/sup 2/ and 0.188 /spl mu/m/sup 2/ in 0.25 /spl mu/m technology. All these features and the small cell size compared to any other flash cell make this device a very attractive solution for all NVM applications. read more read less

Topics:

Charge trap flash (54%)54% related to the paper, Flash memory (54%)54% related to the paper, Non-volatile memory (52%)52% related to the paper, Hot-carrier injection (52%)52% related to the paper
1,170 Citations
Journal Article DOI: 10.1109/LED.2003.822667
30-W/mm GaN HEMTs by field plate optimization

Abstract:

GaN high-electron-mobility-transistors (HEMTs) on SiC were fabricated with field plates of various dimensions for optimum performance Great enhancement in radio frequency (RF) current-voltage swings was achieved with acceptable compromise in gain, through both reduction in the trapping effect and increase in breakdown voltage... GaN high-electron-mobility-transistors (HEMTs) on SiC were fabricated with field plates of various dimensions for optimum performance Great enhancement in radio frequency (RF) current-voltage swings was achieved with acceptable compromise in gain, through both reduction in the trapping effect and increase in breakdown voltages When biased at 120 V, a continuous wave output power density of 322 W/mm and power-added efficiency (PAE) of 548% at 4 GHz were obtained using devices with dimensions of 055/spl times/246 /spl mu/m/sup 2/ and a field-plate length of 11 /spl mu/m Devices with a shorter field plate of 09 /spl mu/m also generated 306 W/mm with 496% PAE at 8 GHz Such ultrahigh power densities are a dramatic improvement over the 10-12 W/mm values attained by conventional gate GaN-based HEMTs read more read less

Topics:

Gallium nitride (50%)50% related to the paper
1,077 Citations
open accessOpen access Journal Article DOI: 10.1109/LED.2007.891668
A Graphene Field-Effect Device
Max C. Lemme, Tim Echtermeyer1, M. Baus1, Heinrich Kurz1

Abstract:

In this letter, a top-gated field-effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from the top-gated Graphene-FEDs. The ... In this letter, a top-gated field-effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from the top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs read more read less

Topics:

Graphene nanoribbons (68%)68% related to the paper, Graphene oxide paper (66%)66% related to the paper, Graphene (62%)62% related to the paper, Electron mobility (54%)54% related to the paper
1,059 Citations
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IEEE Electron Device Letters format uses IEEEtran citation style.

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Frequently asked questions

1. Can I write IEEE Electron Device Letters in LaTeX?

Absolutely not! Our tool has been designed to help you focus on writing. You can write your entire paper as per the IEEE Electron Device Letters guidelines and auto format it.

2. Do you follow the IEEE Electron Device Letters guidelines?

Yes, the template is compliant with the IEEE Electron Device Letters guidelines. Our experts at SciSpace ensure that. If there are any changes to the journal's guidelines, we'll change our algorithm accordingly.

3. Can I cite my article in multiple styles in IEEE Electron Device Letters?

Of course! We support all the top citation styles, such as APA style, MLA style, Vancouver style, Harvard style, and Chicago style. For example, when you write your paper and hit autoformat, our system will automatically update your article as per the IEEE Electron Device Letters citation style.

4. Can I use the IEEE Electron Device Letters templates for free?

Sign up for our free trial, and you'll be able to use all our features for seven days. You'll see how helpful they are and how inexpensive they are compared to other options, Especially for IEEE Electron Device Letters.

5. Can I use a manuscript in IEEE Electron Device Letters that I have written in MS Word?

Yes. You can choose the right template, copy-paste the contents from the word document, and click on auto-format. Once you're done, you'll have a publish-ready paper IEEE Electron Device Letters that you can download at the end.

6. How long does it usually take you to format my papers in IEEE Electron Device Letters?

It only takes a matter of seconds to edit your manuscript. Besides that, our intuitive editor saves you from writing and formatting it in IEEE Electron Device Letters.

7. Where can I find the template for the IEEE Electron Device Letters?

It is possible to find the Word template for any journal on Google. However, why use a template when you can write your entire manuscript on SciSpace , auto format it as per IEEE Electron Device Letters's guidelines and download the same in Word, PDF and LaTeX formats? Give us a try!.

8. Can I reformat my paper to fit the IEEE Electron Device Letters's guidelines?

Of course! You can do this using our intuitive editor. It's very easy. If you need help, our support team is always ready to assist you.

9. IEEE Electron Device Letters an online tool or is there a desktop version?

SciSpace's IEEE Electron Device Letters is currently available as an online tool. We're developing a desktop version, too. You can request (or upvote) any features that you think would be helpful for you and other researchers in the "feature request" section of your account once you've signed up with us.

10. I cannot find my template in your gallery. Can you create it for me like IEEE Electron Device Letters?

Sure. You can request any template and we'll have it setup within a few days. You can find the request box in Journal Gallery on the right side bar under the heading, "Couldn't find the format you were looking for like IEEE Electron Device Letters?”

11. What is the output that I would get after using IEEE Electron Device Letters?

After writing your paper autoformatting in IEEE Electron Device Letters, you can download it in multiple formats, viz., PDF, Docx, and LaTeX.

12. Is IEEE Electron Device Letters's impact factor high enough that I should try publishing my article there?

To be honest, the answer is no. The impact factor is one of the many elements that determine the quality of a journal. Few of these factors include review board, rejection rates, frequency of inclusion in indexes, and Eigenfactor. You need to assess all these factors before you make your final call.

13. What is Sherpa RoMEO Archiving Policy for IEEE Electron Device Letters?

SHERPA/RoMEO Database

We extracted this data from Sherpa Romeo to help researchers understand the access level of this journal in accordance with the Sherpa Romeo Archiving Policy for IEEE Electron Device Letters. The table below indicates the level of access a journal has as per Sherpa Romeo's archiving policy.

RoMEO Colour Archiving policy
Green Can archive pre-print and post-print or publisher's version/PDF
Blue Can archive post-print (ie final draft post-refereeing) or publisher's version/PDF
Yellow Can archive pre-print (ie pre-refereeing)
White Archiving not formally supported
FYI:
  1. Pre-prints as being the version of the paper before peer review and
  2. Post-prints as being the version of the paper after peer-review, with revisions having been made.

14. What are the most common citation types In IEEE Electron Device Letters?

The 5 most common citation types in order of usage for IEEE Electron Device Letters are:.

S. No. Citation Style Type
1. Author Year
2. Numbered
3. Numbered (Superscripted)
4. Author Year (Cited Pages)
5. Footnote

15. How do I submit my article to the IEEE Electron Device Letters?

It is possible to find the Word template for any journal on Google. However, why use a template when you can write your entire manuscript on SciSpace , auto format it as per IEEE Electron Device Letters's guidelines and download the same in Word, PDF and LaTeX formats? Give us a try!.

16. Can I download IEEE Electron Device Letters in Endnote format?

Yes, SciSpace provides this functionality. After signing up, you would need to import your existing references from Word or Bib file to SciSpace. Then SciSpace would allow you to download your references in IEEE Electron Device Letters Endnote style according to Elsevier guidelines.

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