Example of Frontiers of Optoelectronics format
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Frontiers of Optoelectronics — Template for authors

Publisher: Springer
Categories Rank Trend in last 3 yrs
Electrical and Electronic Engineering #276 of 693 up up by 67 ranks
Electronic, Optical and Magnetic Materials #112 of 246 up up by 29 ranks
journal-quality-icon Journal quality:
Good
calendar-icon Last 4 years overview: 158 Published Papers | 537 Citations
indexed-in-icon Indexed in: Scopus
last-updated-icon Last updated: 01/06/2020
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Related Journals

open access Open Access

IEEE

Quality:  
High
CiteRatio: 5.5
SJR: 0.81
SNIP: 1.008
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Springer

Quality:  
High
CiteRatio: 15.9
SJR: 3.473
SNIP: 2.052
open access Open Access

IEEE

Quality:  
High
CiteRatio: 4.4
SJR: 0.732
SNIP: 1.305

Journal Performance & Insights

CiteRatio

SCImago Journal Rank (SJR)

Source Normalized Impact per Paper (SNIP)

A measure of average citations received per peer-reviewed paper published in the journal.

Measures weighted citations received by the journal. Citation weighting depends on the categories and prestige of the citing journal.

Measures actual citations received relative to citations expected for the journal's category.

3.4

42% from 2019

CiteRatio for Frontiers of Optoelectronics from 2016 - 2020
Year Value
2020 3.4
2019 2.4
2018 1.7
2017 1.6
2016 1.3
graph view Graph view
table view Table view

0.538

16% from 2019

SJR for Frontiers of Optoelectronics from 2016 - 2020
Year Value
2020 0.538
2019 0.463
2018 0.328
2017 0.365
2016 0.316
graph view Graph view
table view Table view

0.808

84% from 2019

SNIP for Frontiers of Optoelectronics from 2016 - 2020
Year Value
2020 0.808
2019 0.439
2018 0.38
2017 0.443
2016 0.683
graph view Graph view
table view Table view

insights Insights

  • CiteRatio of this journal has increased by 42% in last years.
  • This journal’s CiteRatio is in the top 10 percentile category.

insights Insights

  • SJR of this journal has increased by 16% in last years.
  • This journal’s SJR is in the top 10 percentile category.

insights Insights

  • SNIP of this journal has increased by 84% in last years.
  • This journal’s SNIP is in the top 10 percentile category.

Frontiers of Optoelectronics

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Springer

Frontiers of Optoelectronics

Approved by publishing and review experts on SciSpace, this template is built as per for Frontiers of Optoelectronics formatting guidelines as mentioned in Springer author instructions. The current version was created on 01 Jun 2020 and has been used by 613 authors to write and format their manuscripts to this journal.

Engineering

i
Last updated on
01 Jun 2020
i
ISSN
2095-2759
i
Impact Factor
Low - 0.448
i
Open Access
No
i
Sherpa RoMEO Archiving Policy
Green faq
i
Plagiarism Check
Available via Turnitin
i
Endnote Style
Download Available
i
Bibliography Name
SPBASIC
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Citation Type
Numbered
[25]
i
Bibliography Example
Blonder GE, Tinkham M, Klapwijk TM. Transition from metallic to tunneling regimes in superconducting micro- constrictions: Excess current, charge imbalance, and su- percurrent conversion. Phys Rev B. 1982;25(7):4515– 4532. Available from: 10.1103/PhysRevB.25.4515.

Top papers written in this journal

open accessOpen access Journal Article DOI: 10.1007/S12200-017-0702-Z
Characterization of basic physical properties of Sb 2 Se 3 and its relevance for photovoltaics
Chao Chen1, David C. Bobela2, Ye Yang2, Shuaicheng Lu1, Kai Zeng1, Cong Ge1, Bo Yang1, Liang Gao1, Yang Zhao1, Matthew C. Beard2, Jiang Tang1

Abstract:

Antimony selenide (Sb2Se3) is a promising absorber material for thin film photovoltaics because of its attractive material, optical and electrical properties. In recent years, the power conversion efficiency (PCE) of Sb2Se3 thin film solar cells has gradually enhanced to 5.6%. In this article, we systematically studied the ba... Antimony selenide (Sb2Se3) is a promising absorber material for thin film photovoltaics because of its attractive material, optical and electrical properties. In recent years, the power conversion efficiency (PCE) of Sb2Se3 thin film solar cells has gradually enhanced to 5.6%. In this article, we systematically studied the basic physical properties of Sb2Se3 such as dielectric constant, anisotropic mobility, carrier lifetime, diffusion length, defect depth, defect density and optical band tail states.We believe such a comprehensive characterization of the basic physical properties of Sb2Se3 lays a solid foundation for further optimization of solar device performance. read more read less

Topics:

Photovoltaics (57%)57% related to the paper, Thin film (53%)53% related to the paper, Carrier lifetime (52%)52% related to the paper
260 Citations
Journal Article DOI: 10.1007/S12200-019-0907-4
Antimony doped Cs 2 SnCl 6 with bright and stable emission
Jinghui Li1, Zhifang Tan1, Manchen Hu1, Chao Chen1, Jiajun Luo1, Shunran Li1, Liang Gao1, Zewen Xiao1, Guangda Niu1, Jiang Tang1

Abstract:

Lead halide perovskites, with high photoluminescence efficiency and narrow-band emission, are promising materials for display and lighting. However, the lead toxicity and environmental sensitivity hinder their potential applications. Herein, a new antimony-doped lead-free inorganic perovskites variant Cs2SnCl6:xSb is designed... Lead halide perovskites, with high photoluminescence efficiency and narrow-band emission, are promising materials for display and lighting. However, the lead toxicity and environmental sensitivity hinder their potential applications. Herein, a new antimony-doped lead-free inorganic perovskites variant Cs2SnCl6:xSb is designed and synthesized. The perovskite variant Cs2SnCl6:xSb exhibits a broadband orange-red emission, with a photoluminescence quantum yield (PLQY) of 37%. The photoluminescence of Cs2SnCl6:xSb is caused by the ionoluminescence of Sb3+ within Cs2SnCl6 matrix, which is verified by temperature dependent photoluminescence (PL) and PL decay measurements. In addition, the all inorganic structure renders Cs2SnCl6:xSb with excellent thermal and water stability. Finally, a white light-emitting diode (white-LED) is fabricated by assembling Cs2SnCl6:0.59%Sb, Cs2SnCl6:2.75%Bi and Ba2Sr2SiO4: Eu2+ onto the commercial UV LED chips, and the color rendering index (CRI) reaches 81. read more read less

Topics:

Photoluminescence (55%)55% related to the paper, Perovskite (structure) (50%)50% related to the paper
83 Citations
Journal Article DOI: 10.1007/S12200-019-0949-7
Topological photonic crystals: a review
Hong-Fei Wang1, Samit Kumar Gupta1, Biye Xie1, Minghui Lu1

Abstract:

The field of topological photonic crystals has attracted growing interest since the inception of optical analog of quantum Hall effect proposed in 2008. Photonic band structures embraced topological phases of matter, have spawned a novel platform for studying topological phase transitions and designing topological optical dev... The field of topological photonic crystals has attracted growing interest since the inception of optical analog of quantum Hall effect proposed in 2008. Photonic band structures embraced topological phases of matter, have spawned a novel platform for studying topological phase transitions and designing topological optical devices. Here, we present a brief review of topological photonic crystals based on different material platforms, including all-dielectric systems, metallic materials, optical resonators, coupled waveguide systems, and other platforms. Furthermore, this review summarizes recent progress on topological photonic crystals, such as higherorder topological photonic crystals, non-Hermitian photonic crystals, and nonlinear photonic crystals. These studies indicate that topological photonic crystals as versatile platforms have enormous potential applications in maneuvering the flow of light. read more read less

Topics:

Photonic crystal (60%)60% related to the paper, Photonics (51%)51% related to the paper
View PDF
64 Citations
open accessOpen access Journal Article DOI: 10.1007/S12200-021-1227-Z
Material exploration via designing spatial arrangement of octahedral units: a case study of lead halide perovskites
Pengfei Fu1, Sanlue Hu1, Jiang Tang1, Zewen Xiao1

Abstract:

Halide perovskites have attracted tremendous attention as semiconducting materials for various optoelectronic applications. The functional metal-halide octahedral units and their spatial arrangements play a key role in the optoelectronic properties of these materials. At present, most of the efforts for material exploration f... Halide perovskites have attracted tremendous attention as semiconducting materials for various optoelectronic applications. The functional metal-halide octahedral units and their spatial arrangements play a key role in the optoelectronic properties of these materials. At present, most of the efforts for material exploration focus on substituting the constituent elements of functional octahedral units, whereas designing the spatial arrangement of the functional units has received relatively little consideration. In this work, via a global structure search based on density functional theory (DFT), we discovered a metastable three-dimensional honeycomb-like perovskite structure with the functional octahedral units arranged through mixed edge- and corner-sharing. We experimentally confirmed that the honeycomb-like perovskite structure can be stabilized by divalent molecular cations with suitable size and shape, such as 2,2′-bisimidazole (BIM). DFT calculations and experimental characterizations revealed that the honeycomb-like perovskite with the formula of BIMPb2I6, synthesized through a solution process, exhibits high electronic dimensionality, a direct allowed bandgap of 2.1 eV, small effective masses for both electrons and holes, and high optical absorption coefficients, which indicates a significant potential for optoelectronic applications. The employed combination of DFT and experimental study provides an exemplary approach to explore prospective optoelectronic semiconductors via spatially arranging functional units. read more read less

Topics:

Perovskite (structure) (53%)53% related to the paper, Density functional theory (53%)53% related to the paper
View PDF
62 Citations
Journal Article DOI: 10.1007/S12200-020-1051-X
Self-trapped excitons in two-dimensional perovskites
Junze Li1, Haizhen Wang1, Dehui Li1

Abstract:

With strong electron-phonon coupling, the self-trapped excitons are usually formed in materials, which leads to the local lattice distortion and localized excitons. The self-trapping strongly depends on the dimensionality of the materials. In the three-dimensional case, there is a potential barrier for self-trapping, whereas ... With strong electron-phonon coupling, the self-trapped excitons are usually formed in materials, which leads to the local lattice distortion and localized excitons. The self-trapping strongly depends on the dimensionality of the materials. In the three-dimensional case, there is a potential barrier for self-trapping, whereas no such barrier is present for quasi-one-dimensional systems. Two-dimensional (2D) systems are marginal cases with a much lower potential barrier or nonexistent potential barrier for the self-trapping, leading to the easier formation of self-trapped states. Self-trapped excitons emission exhibits a broadband emission with a large Stokes shift below the bandgap. 2D perovskites are a class of layered structure material with unique optical properties and would find potential promising optoelectronic. In particular, self-trapped excitons are present in 2D perovskites and can significantly influence the optical and electrical properties of 2D perovskites due to the soft characteristic and strong electron-phonon interaction. Here, we summarized the luminescence characteristics, origins, and characterizations of self-trapped excitons in 2D perovskites and finally gave an introduction to their applications in optoelectronics. read more read less

Topics:

Rectangular potential barrier (55%)55% related to the paper
60 Citations
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Frequently asked questions

1. Can I write Frontiers of Optoelectronics in LaTeX?

Absolutely not! Our tool has been designed to help you focus on writing. You can write your entire paper as per the Frontiers of Optoelectronics guidelines and auto format it.

2. Do you follow the Frontiers of Optoelectronics guidelines?

Yes, the template is compliant with the Frontiers of Optoelectronics guidelines. Our experts at SciSpace ensure that. If there are any changes to the journal's guidelines, we'll change our algorithm accordingly.

3. Can I cite my article in multiple styles in Frontiers of Optoelectronics?

Of course! We support all the top citation styles, such as APA style, MLA style, Vancouver style, Harvard style, and Chicago style. For example, when you write your paper and hit autoformat, our system will automatically update your article as per the Frontiers of Optoelectronics citation style.

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Sign up for our free trial, and you'll be able to use all our features for seven days. You'll see how helpful they are and how inexpensive they are compared to other options, Especially for Frontiers of Optoelectronics.

5. Can I use a manuscript in Frontiers of Optoelectronics that I have written in MS Word?

Yes. You can choose the right template, copy-paste the contents from the word document, and click on auto-format. Once you're done, you'll have a publish-ready paper Frontiers of Optoelectronics that you can download at the end.

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It only takes a matter of seconds to edit your manuscript. Besides that, our intuitive editor saves you from writing and formatting it in Frontiers of Optoelectronics.

7. Where can I find the template for the Frontiers of Optoelectronics?

It is possible to find the Word template for any journal on Google. However, why use a template when you can write your entire manuscript on SciSpace , auto format it as per Frontiers of Optoelectronics's guidelines and download the same in Word, PDF and LaTeX formats? Give us a try!.

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Of course! You can do this using our intuitive editor. It's very easy. If you need help, our support team is always ready to assist you.

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SciSpace's Frontiers of Optoelectronics is currently available as an online tool. We're developing a desktop version, too. You can request (or upvote) any features that you think would be helpful for you and other researchers in the "feature request" section of your account once you've signed up with us.

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After writing your paper autoformatting in Frontiers of Optoelectronics, you can download it in multiple formats, viz., PDF, Docx, and LaTeX.

12. Is Frontiers of Optoelectronics's impact factor high enough that I should try publishing my article there?

To be honest, the answer is no. The impact factor is one of the many elements that determine the quality of a journal. Few of these factors include review board, rejection rates, frequency of inclusion in indexes, and Eigenfactor. You need to assess all these factors before you make your final call.

13. What is Sherpa RoMEO Archiving Policy for Frontiers of Optoelectronics?

SHERPA/RoMEO Database

We extracted this data from Sherpa Romeo to help researchers understand the access level of this journal in accordance with the Sherpa Romeo Archiving Policy for Frontiers of Optoelectronics. The table below indicates the level of access a journal has as per Sherpa Romeo's archiving policy.

RoMEO Colour Archiving policy
Green Can archive pre-print and post-print or publisher's version/PDF
Blue Can archive post-print (ie final draft post-refereeing) or publisher's version/PDF
Yellow Can archive pre-print (ie pre-refereeing)
White Archiving not formally supported
FYI:
  1. Pre-prints as being the version of the paper before peer review and
  2. Post-prints as being the version of the paper after peer-review, with revisions having been made.

14. What are the most common citation types In Frontiers of Optoelectronics?

The 5 most common citation types in order of usage for Frontiers of Optoelectronics are:.

S. No. Citation Style Type
1. Author Year
2. Numbered
3. Numbered (Superscripted)
4. Author Year (Cited Pages)
5. Footnote

15. How do I submit my article to the Frontiers of Optoelectronics?

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16. Can I download Frontiers of Optoelectronics in Endnote format?

Yes, SciSpace provides this functionality. After signing up, you would need to import your existing references from Word or Bib file to SciSpace. Then SciSpace would allow you to download your references in Frontiers of Optoelectronics Endnote style according to Elsevier guidelines.

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