A
A. Olivier
Researcher at University of Grenoble
Publications - 26
Citations - 3683
A. Olivier is an academic researcher from University of Grenoble. The author has contributed to research in topics: Tunnel magnetoresistance & High-electron-mobility transistor. The author has an hindex of 7, co-authored 24 publications receiving 3001 citations. Previous affiliations of A. Olivier include Centre national de la recherche scientifique & university of lille.
Papers
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Journal ArticleDOI
From bulk to monolayer MoS2: evolution of Raman scattering
Hong Li,Qing Zhang,Chin Chong Yap,Beng Kang Tay,Teo Hang Tong Edwin,A. Olivier,Dominique Baillargeat +6 more
TL;DR: In this paper, it was shown that only the Raman frequencies of E 1 and A 1g peaks vary monotonously with the layer number of ultrathin Molybdenum disulfi de (MoS 2 ).
Journal ArticleDOI
Single-shot all-optical switching of magnetization in Tb/Co multilayer-based electrodes.
L. Avilés-Félix,A. Olivier,G. Li,C. S. Davies,L. Álvaro-Gómez,M. Rubio-Roy,Stéphane Auffret,Andrei Kirilyuk,Alexey Kimel,Th. Rasing,Liliana D. Buda-Prejbeanu,Ricardo C. Sousa,B. Dieny,I. L. Prejbeanu +13 more
TL;DR: The development of perpendicular magnetic tunnel junctions incorporating a stack of Tb/Co nanolayers whose magnetization can be all-optically controlled via helicity-independent single-shot switching is reported, offering a technologically-viable path towards the realization of hybrid spintronic-photonic systems featuring THz switching speeds.
Journal ArticleDOI
Integration of Tb/Co multilayers within optically switchable perpendicular magnetic tunnel junctions
L. Avilés-Félix,L. Álvaro-Gómez,G. Li,C. S. Davies,A. Olivier,M. Rubio-Roy,Stéphane Auffret,Andrei Kirilyuk,Alexey Kimel,Th. Rasing,Liliana D. Buda-Prejbeanu,Ricardo C. Sousa,Bernard Dieny,Ioan Lucian Prejbeanu +13 more
TL;DR: In this paper, a multilayered stack of [Tb/Co] nanolayers was used for single-shot switching of the magnetization in the multilayer stack with either 60 fs-long or 5 ps laser pulses with incident fluences down to 4.7 mJ/cm2.
Journal ArticleDOI
Sb-HEMT: Toward 100-mV Cryogenic Electronics
A. Noudeviwa,Yannick Roelens,Francois Danneville,A. Olivier,N. Wichmann,N. Waldhoff,Sylvie Lepilliet,Gilles Dambrine,Ludovic Desplanque,Xavier Wallart,Giuseppe Moschetti,Jan Grahn,Sylvain Bollaert +12 more
TL;DR: In this article, the authors present a full set of characteristics (dc, fT, fmax, and noise) of InAs/AlSb high-electron mobility transistors (HEMTs) operating under cryogenic temperature and low power conditions.
Journal ArticleDOI
Temperature-dependent spontaneous emission of PbS quantum dots inside photonic nanostructures at telecommunication wavelength
Muhammad Danang Birowosuto,Masato Takiguchi,A. Olivier,Landobasa Y. M. Tobing,Eiichi Kuramochi,Atsushi Yokoo,Wang Hong,Masaya Notomi +7 more
TL;DR: In this article, the spontaneous emission of PbS quantum dots (QDs) in different photonic nanostructures has been studied and the authors used the temperature-dependent exciton photoluminescence and the classic dipole near interface models to understand spontaneous emission control at various temperatures.