One-dimensional ZnO nanostructures (nanowires/nanorods) are attractive materials for applications such as gas sensors, biosensors, solar cells, and photocatalysts. This is due to the relatively easy production process of these kinds of nanostructures with excellent charge carrier transport properties and high crystalline quality. In this work, we review the photoluminescence (PL) properties of single and collective ZnO nanowires and nanorods. As different growth techniques were obtained for the presented samples, a brief review of two popular growth methods, vapor-liquid-solid (VLS) and hydrothermal, is shown. Then, a discussion of the emission process and characteristics of the near-band edge excitonic emission (NBE) and deep-level emission (DLE) bands is presented. Their respective contribution to the total emission of the nanostructure is discussed using the spatial information distribution obtained by scanning transmission electron microscopy−cathodoluminescence (STEM-CL) measurements. Also, the influence of surface effects on the photoluminescence of ZnO nanowires, as well as the temperature dependence, is briefly discussed for both ultraviolet and visible emissions. Finally, we present a discussion of the size reduction effects of the two main photoluminescent bands of ZnO. For a wide emission (near ultra-violet and visible), which has sometimes been attributed to different origins, we present a summary of the different native point defects or trap centers in ZnO as a cause for the different deep-level emission bands.

Photoluminescence of ZnO Nanowires: A Review.

Tailoring optical bandgap of ZnO nanostructured thin films doped with different elements facilitates potential material for photonic applications. Different methods of fabrication process result in different optical and structural properties for the same amount of Mg content. Therefore, details investigation of structural and optical parameters, and their correlation need to be revealed to utilize the fabricated thin films. In this work, Mg-doped ZnO thin film of 200 nm thickness was fabricated by sol-gel spin coating method on a glass substrate for four different Mg content levels. Multiple layers were deposited by a spin coater to increase the film thickness. The prepared thin films were characterized by SEM, XRD, EDS, and UV–Vis spectroscopy. The spectroscopic analysis showed a uniform crystalline nanostructured surface with less structural defects, enhanced transmittance, and higher optical bandgap than that of pure ZnO nanostructured thin film. Change of Mg content from 2% to 8% facilitated tuning of bandgap in the range of 3.30–3.39 eV. Changing trend of structural and optical parameters with Mg content showed non-linear, non-monotonic relation. In-depth analysis of structural and optical properties provides crucial information to form a better view about bandgap dependency on structural parameters.

Influence of Mg content on tailoring optical bandgap of Mg-doped ZnO thin film prepared by sol-gel method

Transparent heat regulating (THR) materials and coatings for energy saving window applications: Impact of materials design, micro-structural, and interface quality on the THR performance

We report manufacturing and characterization of low cost ZnO thin films grown on glass substrates by sol-gel spin coating method. For structural properties, X-ray diffraction measurements have been utilized for evaluating the dominant orientation of the thin films. For optical properties, reflectance and transmittance spectrophotometric measurements have been done in the spectral range from 350 nm to 2000 nm. The transmittance of the prepared thin films is 92.4% and 88.4%. Determination of the optical constants such as refractive index, absorption coefficient, and dielectric constant in this wavelength range has been evaluated. Further, normal dispersion of the refractive index has been analyzed in terms of single oscillator model of free carrier absorption to estimate the dispersion and oscillation energy. The lattice dielectric constant and the ratio of free carrier concentration to free carrier effective mass have been determined. Moreover, photoluminescence measurements of the thin films in the spectral range from 350 nm to 900 nm have been presented. Electrical measurements for resistivity evaluation of the films have been done. An analysis in terms of order-disorder of the material has been presented to provide more consistency in the results.

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Structural, Optical Constants and Photoluminescence of ZnO Thin Films Grown by Sol-Gel Spin Coating

In this work, zinc oxide (ZnO) multilayer thin films are deposited on glass substrate using sol-gel spin coating technique and the effect of these multilayer films on optical, electrical and structural properties are investigated. It is observed that these multilayer films have great impact on the properties of ZnO. X-ray Diffraction (XRD) confirms that ZnO has hexagonal wurtzite structure. Scanning Electron Microscopy (SEM) showed the crack-free films which have uniformly distributed grains structures. Both micro and nano particles of ZnO are present on thin films. Four point probe measured the electrical properties showed the decreasing trend between the average resistivity and the number of layers. The optical absorption spectra measured using UV–Vis. showed the average transmittance in the visible region of all films is 80% which is good for solar spectra. The performance of the multilayer as transparent conducting material is better than the single layer of ZnO. This work provides a low cost, environment friendly and well abandoned material for solar cells applications.

Characterizations of multilayer ZnO thin films deposited by sol-gel spin coating technique

Stimulated surface- and edge-emissions were investigated for ZnO thin films grown epitaxially by pulsed laser deposition. The lasing threshold was 0.32 MW/cm2 for surface pumping and 0.5 MW/cm2 for edge pumping, which is significantly lower than thresholds observed previously. A modified variable stripe length method was used to measure the gain, which was 1369 cm−1 for the N-band emission. Losses were measured using the shifting excitation spot method and values of 6.2 cm−1 and 6.3 cm−1 were found for the N-band and P-band, respectively. The measured gain and loss were the highest and lowest (respectively) ever reported for ZnO films.

http://nanovation.com/en/wp-content/uploads/sites/3/2015/02/Gadallah-APL-2013-Record-UV-Lasing-Gain-and-Losses-for-ZnO.pdf

Stimulated emission from ZnO thin films with high optical gain and low loss

Stimulated surface- and edge-emission were investigated for ZnO thin films grown epitaxially by pulsed laser deposition. The lasing threshold was 0.32 MW/cm2 for surface pumping and 0.5 MW/cm2 for edge pumping, which is significantly lower than thresholds observed previously. A modified variable stripe length method was used to measure the gain, which was 1369 cm-1 for N-band emission. Losses were measured using the shifting excitation spot method and values of 6.2 cm-1 and 6.3 cm-1 were found for the N-band and P-band, respectively. The measured gain and loss were the highest and lowest (respectively) ever reported for ZnO films.

A.-S. Gadallah

Papers

Structural, Optical Constants and Photoluminescence of ZnO Thin Films Grown by Sol-Gel Spin Coating

Stimulated emission from ZnO thin films with high optical gain and low loss

Stimulated emission from ZnO thin films with high optical gain and low loss

Ag surface plasmon enhances luminescence of CdTe QDs

Structural and optical properties of p-quaterphenyl thin films and application in organic/inorganic photodiodes