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Design Of Analog Cmos Integrated Circuits

Solid-state electronics

Spintronics: A contemporary review of emerging electronics devices

Diverse diode characteristics were observed in two-dimensional (2D) black phosphorus (BP) and molybdenum disulfide (MoS2) heterojunctions. The characteristics of a backward rectifying diode, a Zener diode, and a forward rectifying diode were obtained from the heterojunction through thickness modulation of the BP flake or back gate modulation. Moreover, a tunnel diode with a precursor to negative differential resistance can be realized by applying dual gating with a solid polymer electrolyte layer as a top gate dielectric material. Interestingly, a steep subthreshold swing of 55 mV/dec was achieved in a top-gated 2D BP–MoS2 junction. Our simple device architecture and chemical doping-free processing guaranteed the device quality. This work helps us understand the fundamentals of tunneling in 2D semiconductor heterostructures and shows great potential in future applications in integrated low-power circuits.

Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p-n Junction.

Impact of high-k gate dielectric on analog and RF performance of nanoscale DG-MOSFET

Effect of gate engineering in double-gate MOSFETs for analog/RF applications

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Analytical study of Dual Material Surrounding Gate MOSFET to suppress short-channel effects (SCEs)

An analytical model of dielectric-modulated junctionless gate-stack surrounding gate MOSFET for application as a biosensor is presented. An expression for the channel-center potential is obtained by solving the 2-D Poisson's equation using a parabolic-potential approach. An analytical model for the threshold voltage is developed from the minimum channel-center potential to analyze the sensitivity of the biosensor. Moreover, the effects of the variation of the different device dimensional parameters on the sensitivity of the biosensor were investigated in order to study the dielectric modulation effects due to the permittivity changes by the biomolecules present within the nanogap cavity. The analytical model is verified and validated with the help of TCAD device simulations.

Analytical modeling and sensitivity analysis of dielectric-modulated junctionless gate stack surrounding gate MOSFET (JLGSSRG) for application as biosensor

We report a systematic, quantitative investigation of analog and RF performance of cylindrical surrounding-gate (SRG) silicon MOSFET. To derive the model, a pseudo-two-dimensional (2-D) approach applying Gauss's law in the channel region is extended for the cylindrical SRG MOSFET. Based on surface potential approach, expressions of drain current and differential capacitances are obtained analytically. Analog/RF figures of merit of SRG MOSFET are studied, including transconductance efficiency g m/I d, intrinsic gain, output resistance, cutoff frequency f T, maximum oscillation frequency f max and gain bandwidth product GBW. The trends related to their variations along the downscaling of dimension are provided. In order to validate our model, the modeled predictions have been extensively compared with the simulated characteristics obtained from the ATLAS device simulator and a nice agreement is observed with a wide range of geometrical parameters.

Angsuman Sarkar

Papers

Effect of gate engineering in double-gate MOSFETs for analog/RF applications

Analytical study of Dual Material Surrounding Gate MOSFET to suppress short-channel effects (SCEs)

Analytical modeling and sensitivity analysis of dielectric-modulated junctionless gate stack surrounding gate MOSFET (JLGSSRG) for application as biosensor

Analog and RF performance investigation of cylindrical surrounding-gate MOSFET with an analytical pseudo-2D model

Study of effect of gate-length downscaling on the analog/RF performance and linearity investigation of InAs-based nanowire Tunnel FET