B
Biswanath Chakraborty
Researcher at City University of New York
Publications - 35
Citations - 6401
Biswanath Chakraborty is an academic researcher from City University of New York. The author has contributed to research in topics: Graphene & Raman spectroscopy. The author has an hindex of 18, co-authored 35 publications receiving 5624 citations. Previous affiliations of Biswanath Chakraborty include Indian Institute of Science.
Papers
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Journal ArticleDOI
Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor
Anindya Das,Simone Pisana,Biswanath Chakraborty,S. Piscanec,Srijan Kumar Saha,Umesh V. Waghmare,Kostya S. Novoselov,H. R. Krishnamurthy,Andre K. Geim,Andrea C. Ferrari,A. K. Sood +10 more
TL;DR: This work demonstrates a top-gated graphene transistor that is able to reach doping levels of up to 5x1013 cm-2, which is much higher than those previously reported.
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Symmetry-dependent phonon renormalization in monolayer MoS 2 transistor
Biswanath Chakraborty,Achintya Bera,D. V. S. Muthu,Somnath Bhowmick,Umesh V. Waghmare,A. K. Sood +5 more
TL;DR: Using in situ Raman scattering from a single-layer MoS2 electrochemically top-gated field effect transistor (FET), this paper showed softening and broadening of the A(1g) phonon with electron doping, whereas the other Raman-active E2g(1) mode remains essentially inert.
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Raman spectroscopy of graphene on different substrates and influence of defects
TL;DR: In this paper, the authors show the evolution of Raman spectra with a number of graphene layers on different substrates, $SiO_2/Si$ and conducting indium tin oxide (ITO) plate.
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Layer-dependent resonant Raman scattering of a few layer MoS2
TL;DR: In this paper, the authors reported resonant Raman scattering of MoS2 layers comprising of single, bi, four and seven layers, showing a strong dependence on the layer thickness.
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Phonon renormalization in doped bilayer graphene
TL;DR: In this paper, phonon renormalization in bilayer graphene as a function of doping was reported, showing that the Raman G peak stiffens and sharpens for both electron and hole doping as a result of the nonadiabatic Kohn anomaly at the Gamma point.