C
Calvin F. Quate
Researcher at Stanford University
Publications - 273
Citations - 33322
Calvin F. Quate is an academic researcher from Stanford University. The author has contributed to research in topics: Scanning tunneling microscope & Cantilever. The author has an hindex of 77, co-authored 272 publications receiving 32434 citations. Previous affiliations of Calvin F. Quate include PARC & Xerox.
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Atomic force microscope
TL;DR: The atomic force microscope as mentioned in this paper is a combination of the principles of the scanning tunneling microscope and the stylus profilometer, which was proposed as a method to measure forces as small as 10-18 N. As one application for this concept, they introduce a new type of microscope capable of investigating surfaces of insulators on an atomic scale.
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Synthesis of individual single-walled carbon nanotubes on patterned silicon wafers
TL;DR: In this article, a strategy for making high-quality individual carbon nanotubes on silicon wafers patterned with micrometre-scale islands of catalytic material is described.
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Imaging crystals, polymers, and processes in water with the atomic force microscope.
Barney Drake,Craig Prater,A. L. Weisenhorn,Scot A. C. Gould,T. R. Albrecht,Calvin F. Quate,David S. Cannell,Helen G. Hansma,Paul K. Hansma +8 more
TL;DR: Images of mica demonstrate that atomic resolution is possible on rigid materials, thus opening the possibility of atomic-scale corrosion experiments on nonconductors and showing the potential of the AFM for revealing the structure of molecules important in biology and medicine.
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Microfabrication of cantilever styli for the atomic force microscope
TL;DR: In this article, a number of microfabrication processes for constructing cantilever styli with properties ideal for the atomic force microscopy (AFM) were presented. But none of them are suitable for high-resolution microscopy.
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Atomic resolution with an atomic force microscope using piezoresistive detection
TL;DR: In this article, a new detection scheme for atomic force microscopy (AFM) was proposed to yield atomic resolution images of conducting and nonconducting layered materials using a piezoresistive strain sensor embedded in the AFM cantilever.