Grace Li

TL;DR: The mechanical deformation of wurtzite GaN epilayers grown on sapphire substrates is studied by spherical indentation, cross-sectional transmission electron microscopy (XTEM), and scanning cathodoluminescence (CL) monochromatic imaging as mentioned in this paper.

TL;DR: In this paper, a depth-resolved cathodoluminescence (CL) and transmission electron microscopy study of autodoped GaN grown on sapphire is presented.

TL;DR: In this article, the deformation behavior of wurtzite GaN films modified by ion bombardment is studied by nanoindentation with a spherical indenter, and it is shown that implantation disorder significantly changes the mechanical properties of GaN.

TL;DR: In this paper, an increase in the density of collision cascades dramatically enhances the level of implantation-produced lattice disorder in wurtzite GaN films bombarded with 0.5 MeV Bi1 and 1MeV Bi2 ions (the so-called molecular effect) by Rutherford backscattering/channeling spectrometry.

TL;DR: In this paper, the effects of ion bombardment and postimplantation annealing on luminescence generation and light absorption in GaN optically doped by keV ion implantation were investigated.