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Herre S. J. van der Zant

Researcher at Delft University of Technology

Publications -  338
Citations -  32186

Herre S. J. van der Zant is an academic researcher from Delft University of Technology. The author has contributed to research in topics: Graphene & Conductance. The author has an hindex of 71, co-authored 314 publications receiving 26869 citations. Previous affiliations of Herre S. J. van der Zant include IMDEA & Autonomous University of Madrid.

Papers
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Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

Andrea C. Ferrari, +68 more
- 04 Mar 2015 - 
TL;DR: An overview of the key aspects of graphene and related materials, ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries are provided.
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Isolation and characterization of few-layer black phosphorus

TL;DR: Castellanos-Gomez et al. as mentioned in this paper described the isolation and characterization of few-layer black phosphorus in the 2D Matererials, and showed that the few layer black phosphorus can be easily isolated and characterized.
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Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping

TL;DR: In this paper, the authors developed an all-dry transfer method that relies on viscoelastic stamps and does not employ any wet chemistry step, which is found to be very advantageous to freely suspend these materials as there are no capillary forces involved in the process.
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Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors

TL;DR: The ambipolar behavior coupled to the fast and broadband photodetection make few-layer black phosphorus a promising 2D material for photodetsection across the visible and near-infrared part of the electromagnetic spectrum.
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Local strain engineering in atomically thin MoS2.

TL;DR: A nonuniform tight-binding model is developed to calculate the electronic properties of MoS2 nanolayers with complex and realistic local strain geometries, finding good agreement with the experimental results.