J
J.S. Chang
Researcher at McMaster University
Publications - 7
Citations - 943
J.S. Chang is an academic researcher from McMaster University. The author has contributed to research in topics: Packed bed & Plasma. The author has an hindex of 5, co-authored 7 publications receiving 880 citations. Previous affiliations of J.S. Chang include Nagoya University.
Papers
More filters
Journal ArticleDOI
Corona discharge processes
TL;DR: In this paper, a review of applications of corona discharge induced plasmas and unipolar ions is presented, focusing on one of two aspects of the discharge: the ions produced or the energetic electrons producing the plasma.
Journal ArticleDOI
Ferro-electric pellet shape effect on C/sub 2/F/sub 6/ removal by a packed-bed-type nonthermal plasma reactor
TL;DR: In this article, the performance of perfluoroethane (C/sub 2/F/sub 6/) gas removal from simulated semiconductor process gas using packed-bed reactor are experimentally investigated.
Journal ArticleDOI
Atmospheric pressure of nitrogen plasmas in a ferroelectric packed-bed barrier discharge reactor. Part II. Spectroscopic measurements of excited nitrogen molecule density and its vibrational temperature
TL;DR: In this paper, the number density of the excited nitrogen molecules has been investigated by spectroscopic measurements at applied voltages from 0 to 20 kV, 60 Hz and gas flow rates from 1 to 5 L/min in pure nitrogen gas.
Journal ArticleDOI
Morphology of High-Frequency Electrohydraulic Discharge for Liquid-Solution Plasmas
TL;DR: In this article, the morphology of high-frequency electrohydraulic discharge for a liquid-solution plasma was investigated along with discharge morphology along with the fundamental nature and basic characteristics of this new type of plasma is relatively not well investigated.
Journal ArticleDOI
Scale-up of ferro-electric packed bed reactor for C2F6 decomposition
TL;DR: In this paper, BaTiO 3 ferro-electric pellet was used as BaTiOs to improve the removal efficiency of perfluoroethane (C 2 F 6 ) gas removal from simulated semiconductor process gas.