L
L.S. Wen
Researcher at Chinese Academy of Sciences
Publications - 39
Citations - 2791
L.S. Wen is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Thin film & Sputtering. The author has an hindex of 23, co-authored 39 publications receiving 2557 citations. Previous affiliations of L.S. Wen include Dalian University of Technology & Central South University.
Papers
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X-ray photoelectron spectroscopy and auger electron spectroscopy studies of Al-doped ZnO films
TL;DR: In this article, the chemical state of oxygen, aluminum and zinc in Al-doped ZnO (ZAO) films was investigated by X-ray photoelectron spectroscopy (XPS), as well as the transition zone of the film-to-substrate, by auger electron spectrography (AES), showing that zinc remains mostly in the formal valence states of Zn2+.
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Surface characterization of transparent conductive oxide Al-doped ZnO films
TL;DR: In this paper, high preferred (0, 0, 2) orientation Al-doped ZnO (ZAO) films were prepared by DC magnetron reactive sputtering from a Zn target mixed with Al of 2.0% and XPS analysis indicates Al-enrichment on the film surface.
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Transparent conductive ZnO:Al thin films deposited on flexible substrates prepared by direct current magnetron sputtering
TL;DR: In this article, different methods to reduce the sheet resistance of ZnO:Al (AZO) films on flexible substrates without degrading the optical transmittance in the visible range were reported.
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Intrinsic limit of electrical properties of transparent conductive oxide films
TL;DR: In this article, the authors calculated the intrinsic limit of conductivity of TCO films regardless of precise details of the preparation procedure and showed that the effective mass of charge carriers has a strong dependence on carrier concentration.
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Preparation and characterization of Al and Mn doped ZnO (ZnO: (Al, Mn)) transparent conducting oxide films
TL;DR: In this paper, the electro-optical, chemical and structural properties of doped-ZnO films deposited by DC-reactive magnetron sputtering at room temperature using the bi-dopant Al and Mn have been obtained.