M
M. Baus
Researcher at RWTH Aachen University
Publications - 38
Citations - 2173
M. Baus is an academic researcher from RWTH Aachen University. The author has contributed to research in topics: Graphene & Silicon photonics. The author has an hindex of 15, co-authored 38 publications receiving 2091 citations.
Papers
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Journal ArticleDOI
A Graphene Field-Effect Device
TL;DR: In this article, a top-gated field effect device (FED) manufactured from monolayer graphene is investigated, where a conventional top-down CMOS-compatible process flow is applied.
Journal ArticleDOI
Nonvolatile Switching in Graphene Field-Effect Devices
TL;DR: In this article, a new approach was proposed to engineer a band gap in graphene field effect transistors (FEDs) by controlled structural modification of the graphene channel itself, where the conductance in the FEDs was switched between a conductive ldquoon-staterdquo and an insulating ld-quooff-state-of-the-art transistors with more than six orders of magnitude difference in conductance.
Journal ArticleDOI
Synthesis of Graphene on Silicon Dioxide by a Solid Carbon Source
Jens Hofrichter,Bartholoma us N Szafranek,Martin Otto,Tim Echtermeyer,M. Baus,Anne Majerus,V. Geringer,Manfred Ramsteiner,Heinrich Kurz +8 more
TL;DR: The presented approach allows for mass fabrication of polycrystalline graphene without transfer steps while using only CMOS compatible process steps.
Journal ArticleDOI
Non-volatile switching in graphene field effect devices
TL;DR: In this paper, a new approach was proposed to engineer a band gap in graphene field effect devices (FEDs) by controlled structural modification of the graphene channel itself, where the conductance in the FEDs was switched between a conductive "on-state" to an insulating "off-state".
Journal ArticleDOI
Mobility in graphene double gate field effect transistors
Max C. Lemme,Tim Echtermeyer,M. Baus,B. N. Szafranek,Jens Bolten,Matthias Schmidt,Thorsten Wahlbrink,Heinrich Kurz +7 more
TL;DR: In this article, double-gated field effect transistors manufactured from monolayer graphene are investigated and the carrier mobility of single-and doublegated graphene FETs are compared.