M
Mats Jonson
Researcher at University of Gothenburg
Publications - 251
Citations - 7177
Mats Jonson is an academic researcher from University of Gothenburg. The author has contributed to research in topics: Electron & Quantum tunnelling. The author has an hindex of 33, co-authored 249 publications receiving 6715 citations. Previous affiliations of Mats Jonson include Ericsson & Seoul National University.
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Viscoelastic Acoustic Response of Layered Polymer Films at Fluid-Solid Interfaces: Continuum Mechanics Approach
TL;DR: In this article, the authors derived the general solution of a wave equation describing the dynamics of two-layer viscoelastic polymer materials of arbitrary thickness deposited on solid (quartz) surfaces in a fluid environment.
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Mott's formula for the thermopower and the Wiedemann-Franz law
Mats Jonson,Gerald D. Mahan +1 more
TL;DR: In this article, the Mott formula for the thermopower and the Wiedemann-Franz law were derived using a Green's-function technique that emphasizes the importance of corrections to the free-electron heat current operator.
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Descriptions of exchange and correlation effects in inhomogeneous electron systems
TL;DR: In this paper, the authors discuss general but approximate descriptions of XC effects in inhomogeneous electron systems, in particular valence electrons, using homogeneous-electron-gas data as input.
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Missing mass effect in biosensor's QCM applications.
TL;DR: A new physical effect 'missing mass' of the sample in liquid phase measurements is predicted and a fundamental result of the theory is the analog of Sauerbrey relation for layered viscous/viscoelastic medium which can be exploited for the correct physical interpretation of QCM experimental data in biofluids.
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Shuttle Mechanism for Charge Transfer in Coulomb Blockade Nanostructures
L. Y. Gorelik,Andreas Isacsson,M. V. Voinova,Bengt Herbert Kasemo,Robert I. Shekhter,Mats Jonson +5 more
TL;DR: In this article, it was shown that self-excitation of periodic cluster oscillations in conjunction with sequential processes of cluster charging and decharging appears for a sufficiently large bias voltage.