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Muhammad A. Alam

Researcher at Purdue University

Publications -  553
Citations -  27173

Muhammad A. Alam is an academic researcher from Purdue University. The author has contributed to research in topics: Negative-bias temperature instability & Photovoltaic system. The author has an hindex of 67, co-authored 522 publications receiving 23929 citations. Previous affiliations of Muhammad A. Alam include Purdue University System & University of Illinois at Urbana–Champaign.

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High-efficiency solution-processed perovskite solar cells with millimeter-scale grains

TL;DR: A solution-based hot-casting technique is demonstrated to grow continuous, pinhole-free thin films of organometallic perovskites with millimeter-scale crystalline grains that are applicable to several other material systems plagued by polydispersity, defects, and grain boundary recombination in solution-processed thin films.
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High-efficiency two-dimensional Ruddlesden–Popper perovskite solar cells

TL;DR: Thin films of near-single-crystalline quality are produced, in which the crystallographic planes of the inorganic perovskite component have a strongly preferential out-of-plane alignment with respect to the contacts in planar solar cells to facilitate efficient charge transport.
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High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes

TL;DR: Dense, perfectly aligned arrays of long, perfectly linear SWNTs are reported as an effective thin-film semiconductor suitable for integration into transistors and other classes of electronic devices, representing a route to large-scale integrated nanotube electronics.
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Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates

TL;DR: In this paper, a patterned layer of randomly oriented or partially aligned carbon nanotubes, such as one or more interconnected SWNT networks, is used to provide a semiconductor channel exhibiting improved electronic properties relative to conventional nanotube-based electronic systems.
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A comprehensive model of PMOS NBTI degradation

TL;DR: A comprehensive model for NBTI phenomena within the framework of the standard reaction–diffusion model is constructed and it is demonstrated how to solve the reaction-diffusion equations in a way that emphasizes the physical aspects of the degradation process and allows easy generalization of the existing work.