The history of the Point Defect Model for the passive state: A brief review of film growth aspects

The formation kinetics and electric properties of anodic barrier oxides on Al, Hf, Nb, Ta, Ti, and Zr depend on the migration of ions, controlled by an electric field strength of up to 107 V cm−1. The high field model, based on ideas of Guntherschulze, Betz, Verwey, Mott, and Cabrera, explains only parts of the experiments. Contradictory models and investigations of the last 60 years are compared with new results, which enable a more detailed understanding of many aspects of the high field model, e.g. the shape of experimental transients, the time and field dependent concentration of mobile ions, the nature of the mobile species and the interaction of anion and cation transport, and the location of the rate determining step.

Thin anodic oxide layers on aluminium and other valve metals: high field regime

Kinetics of the reaction of oxygen with clean nickel single crystal surfaces: I. Ni(100) surface

Nanoscale structural information underlies research aimed at fabricating catalysts in a more controlled way. Surface science methods can provide that information, but the complexity of heterogeneous systems in general hinders the application of these methods to their full potential. In the last decades, a solution to this problem has been found in the use of model systems, ranging from well-defined single crystals of the supported phase to films or particles of that phase on flat or spherical model supports. In this paper, we review the literature on the latter model systems, that is, particles on a model support. Attention is payed to both preparation and use of such model systems.

https://pure.tue.nl/ws/files/1495087/617871.pdf

Surface Science Approach to Modeling Supported Catalysts

The growth kinetics and mechanisms of thin aluminum-oxide films formed by the dry, thermal oxidation of a bare Al(431) substrate at a partial oxygen pressure of 1.33×10−4 Pa in the temperature range of 373–773 K were studied using x-ray photoelectron spectroscopy. The initial oxidation of the bare Al substrate proceeds by an island-by-layer growth mechanism, involving the lateral diffusion over the bare Al substrate surface of mobile oxygen species. At low temperatures (T⩽573 K), an amorphous oxide film develops that attains a limiting (uniform) thickness. At high temperatures (T>573 K), growth is not impeded at a limiting thickness. Kinetic analysis established the occurrences of two different oxide-film growth regimes: an initial regime of very fast oxide-film growth and a second, much slower oxidation stage that is observed only at T>573 K. These results could be discussed in terms of electric-field controlled, interstitial, outward transport of Al cations through a close packing of O anions in the amo...

Growth kinetics and mechanisms of aluminum-oxide films formed by thermal oxidation of aluminum

Low-temperature oxidation is a reaction, occurring at or below room temperature, between a solid and a gas. It usually involves the combination of oxygen with metals, and it has the greatest commercial impact in the presence of moisture, as in corrosion. Cabrera and Mott put forward a theory of low-temperature oxidation, based on the assumption that cation migration occurs under the influence of a potential built up across the growing oxide film. Recent experimental results require that this theory be expanded to explain recent observations such as anion migration during oxide growth and the transition from the initial chemisorbed monolayer to a bulk, threedimensional oxide. The additional ideas put forward in the present paper may be summarized as follows. Low-temperature oxidation is controlled by the nature of the oxide; whether it is a network former or a modifier. A period of fast, linear oxidation is followed by a slow logarithmic reaction whose rate, in turn, can increase if the oxide film crystallizes to form grain boundaries. The initial fast oxidation is a continuation of the chemisorption process. Place exchange (anions and cations interchanging positions) occurs when the energy due to the image force of an oxygen ion is greater than the bond energy holding the ion in place. A stable film forms when this bond energy is greater than the image force energy. The oxygen ions formed on the oxide surface then set up a potential across the film. This potential provides the driving force for continued reaction. Oxide growth during this later stage is a slow, logarithmic process. A barrier to ion transport exists at the gas-oxide interface in the case of anion migration and at the metal-oxide interface in the case of cation migration. In both cases, the field built up across the oxide lowers the barrier sufficiently so that ion migration can occur. Network modifiers allow cation migration. The reaction rate is sensitive to crystallographic orientation of the metal, but not to oxygen pressure. A constant voltage is maintained across the film, so that the Cabrera-Mott theory explains the logarithmic kinetics. Network-forming oxides allow onion migration. The number of anions, and hence, the rate of reaction, is sensitive to oxygen pressure, but not crystallographic orientation of the metal substrate. Since the potential is a result of the mobile anions, the film tends to grow under constant field. The logarithmic kinetics then must be explained by an increasing activation energy for ion transport, as proposed by Eley and Wilkinson. The logarithmic growth rate can be increased by the presence of water vapor if the water introduces “dangling” bonds into an oxide network structure. Crystallization of the oxide film also increases its rate of growth and results in the formation of oxide islands.

N. F. Mott

Papers

Low-temperature oxidation

Reply to M. J. Pryor's discussion of “low-temperature oxidation”

Critique of “on some aspects of low-temperature and anodic oxidation of metals and semiconductors”