S
Shimeng Yu
Researcher at Georgia Institute of Technology
Publications - 329
Citations - 21344
Shimeng Yu is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Resistive random-access memory & Neuromorphic engineering. The author has an hindex of 60, co-authored 312 publications receiving 15008 citations. Previous affiliations of Shimeng Yu include IMEC & TSMC.
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Journal ArticleDOI
Metal–Oxide RRAM
Hon-Sum Philip Wong,Heng-Yuan Lee,Shimeng Yu,Yu-Sheng Chen,Yi Wu,Pang-Shiu Chen,Byoungil Lee,Frederick T. Chen,Ming-Jinn Tsai +8 more
TL;DR: The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide resistive switching random access memory (RRAM) are discussed, with a focus on the use of RRAM for nonvolatile memory application.
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Synaptic electronics: materials, devices and applications
TL;DR: In this paper, the recent progress of synaptic electronics is reviewed, with a focus on the use of synaptic devices for neuromorphic or brain-inspired computing.
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Neuro-Inspired Computing With Emerging Nonvolatile Memorys
TL;DR: This comprehensive review summarizes state of the art, challenges, and prospects of the neuro-inspired computing with emerging nonvolatile memory devices and presents a device-circuit-algorithm codesign methodology to evaluate the impact of nonideal device effects on the system-level performance.
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An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation
TL;DR: In this article, the multilevel capability of metal oxide resistive switching memory was explored for the potential use as a single-element electronic synapse device for the emerging neuromorphic computation system.
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Optoelectronic resistive random access memory for neuromorphic vision sensors.
Feichi Zhou,Zheng Zhou,Jiewei Chen,Tsz Hin Choy,Jingli Wang,Ning Zhang,Ziyuan Lin,Shimeng Yu,Jinfeng Kang,H.-S. Philip Wong,Yang Chai +10 more
TL;DR: A simple two-terminal optoelectronic resistive random access memory (ORRAM) synaptic devices for an efficient neuromorphic visual system that exhibit non-volatile optical resistive switching and light-tunable synaptic behaviours.