Many important applications trigger bulk bitwise operations, i.e., bitwise operations on large bit vectors. In fact, recent works design techniques that exploit fast bulk bitwise operations to accelerate databases (bitmap indices, BitWeaving) and web search (BitFunnel). Unfortunately, in existing architectures, the throughput of bulk bitwise operations is limited by the memory bandwidth available to the processing unit (e.g., CPU, GPU, FPGA, processing-in-memory).To overcome this bottleneck, we propose Ambit, an Accelerator-in-Memory for bulk bitwise operations. Unlike prior works, Ambit exploits the analog operation of DRAM technology to perform bitwise operations completely inside DRAM, thereby exploiting the full internal DRAM bandwidth. Ambit consists of two components. First, simultaneous activation of three DRAM rows that share the same set of sense amplifiers enables the system to perform bitwise AND and OR operations. Second, with modest changes to the sense amplifier, the system can use the inverters present inside the sense amplifier to perform bitwise NOT operations. With these two components, Ambit can perform any bulk bitwise operation efficiently inside DRAM. Ambit largely exploits existing DRAM structure, and hence incurs low cost on top of commodity DRAM designs (1% of DRAM chip area). Importantly, Ambit uses the modern DRAM interface without any changes, and therefore it can be directly plugged onto the memory bus.Our extensive circuit simulations show that Ambit works as expected even in the presence of significant process variation. Averaged across seven bulk bitwise operations, Ambit improves performance by 32X and reduces energy consumption by 35X compared to state-of-the-art systems. When integrated with Hybrid Memory Cube (HMC), a 3D-stacked DRAM with a logic layer, Ambit improves performance of bulk bitwise operations by 9.7X compared to processing in the logic layer of the HMC. Ambit improves the performance of three real-world data-intensive applications, 1) database bitmap indices, 2) BitWeaving, a technique to accelerate database scans, and 3) bit-vector-based implementation of sets, by 3X-7X compared to a state-of-the-art baseline using SIMD optimizations. We describe four other applications that can benefit from Ambit, including a recent technique proposed to speed up web search. We believe that large performance and energy improvements provided by Ambit can enable other applications to use bulk bitwise operations.CCS CONCEPTS• Computer systems organization → Single instruction, multiple data; • Hardware → Hardware accelerator; • Hardware → Dynamic memory;

/pdf/ambit-in-memory-accelerator-for-bulk-bitwise-operations-2t2ntwty69.pdf

Ambit: in-memory accelerator for bulk bitwise operations using commodity DRAM technology

We are experiencing an explosive growth in the number of consumer devices, including smartphones, tablets, web-based computers such as Chromebooks, and wearable devices. For this class of devices, energy efficiency is a first-class concern due to the limited battery capacity and thermal power budget. We find that data movement is a major contributor to the total system energy and execution time in consumer devices. The energy and performance costs of moving data between the memory system and the compute units are significantly higher than the costs of computation. As a result, addressing data movement is crucial for consumer devices. In this work, we comprehensively analyze the energy and performance impact of data movement for several widely-used Google consumer workloads: (1) the Chrome web browser; (2) TensorFlow Mobile, Google's machine learning framework; (3) video playback, and (4) video capture, both of which are used in many video services such as YouTube and Google Hangouts. We find that processing-in-memory (PIM) can significantly reduce data movement for all of these workloads, by performing part of the computation close to memory. Each workload contains simple primitives and functions that contribute to a significant amount of the overall data movement. We investigate whether these primitives and functions are feasible to implement using PIM, given the limited area and power constraints of consumer devices. Our analysis shows that offloading these primitives to PIM logic, consisting of either simple cores or specialized accelerators, eliminates a large amount of data movement, and significantly reduces total system energy (by an average of 55.4% across the workloads) and execution time (by an average of 54.2%).

Google Workloads for Consumer Devices: Mitigating Data Movement Bottlenecks

NAND flash memory is ubiquitous in everyday life today because its capacity has continuously increased and cost has continuously decreased over decades. This positive growth is a result of two key trends: 1) effective process technology scaling; and 2) multi-level (e.g., MLC, TLC) cell data coding. Unfortunately, the reliability of raw data stored in flash memory has also continued to become more difficult to ensure, because these two trends lead to 1) fewer electrons in the flash memory cell floating gate to represent the data; and 2) larger cell-to-cell interference and disturbance effects. Without mitigation, worsening reliability can reduce the lifetime of NAND flash memory. As a result, flash memory controllers in solid-state drives (SSDs) have become much more sophisticated: they incorporate many effective techniques to ensure the correct interpretation of noisy data stored in flash memory cells. In this article, we review recent advances in SSD error characterization, mitigation, and data recovery techniques for reliability and lifetime improvement. We provide rigorous experimental data from state-of-the-art MLC and TLC NAND flash devices on various types of flash memory errors, to motivate the need for such techniques. Based on the understanding developed by the experimental characterization, we describe several mitigation and recovery techniques, including 1) cell-to-cell interference mitigation; 2) optimal multi-level cell sensing; 3) error correction using state-of-the-art algorithms and methods; and 4) data recovery when error correction fails. We quantify the reliability improvement provided by each of these techniques. Looking forward, we briefly discuss how flash memory and these techniques could evolve into the future.

Error Characterization, Mitigation, and Recovery in Flash-Memory-Based Solid-State Drives

Historically, server designers have opted for simple memory systems by picking one of a few commoditized DDR memory products. We are already witnessing a major upheaval in the off-chip memory hierarchy, with the introduction of many new memory products—buffer-on-board, LRDIMM, HMC, HBM, and NVMs, to name a few. Given the plethora of choices, it is expected that different vendors will adopt different strategies for their high-capacity memory systems, often deviating from DDR standards and/or integrating new functionality within memory systems. These strategies will likely differ in their choice of interconnect and topology, with a significant fraction of memory energy being dissipated in I/O and data movement. To make the case for memory interconnect specialization, this paper makes three contributions.First, we design a tool that carefully models I/O power in the memory system, explores the design space, and gives the user the ability to define new types of memory interconnects/topologies. The tool is validated against SPICE models, and is integrated into version 7 of the popular CACTI package. Our analysis with the tool shows that several design parameters have a significant impact on I/O power.We then use the tool to help craft novel specialized memory system channels. We introduce a new relay-on-board chip that partitions a DDR channel into multiple cascaded channels. We show that this simple change to the channel topology can improve performance by 22% for DDR DRAM and lower cost by up to 65% for DDR DRAM. This new architecture does not require any changes to DIMMs, and it efficiently supports hybrid DRAM/NVM systems.Finally, as an example of a more disruptive architecture, we design a custom DIMM and parallel bus that moves away from the DDR3/DDR4 standards. To reduce energy and improve performance, the baseline data channel is split into three narrow parallel channels and the on-DIMM interconnects are operated at a lower frequency. In addition, this allows us to design a two-tier error protection strategy that reduces data transfers on the interconnect. This architecture yields a performance improvement of 18% and a memory power reduction of 23%.The cascaded channel and narrow channel architectures serve as case studies for the new tool and show the potential for benefit from re-organizing basic memory interconnects.

https://dl.acm.org/doi/pdf/10.1145/3085572

CACTI 7: New Tools for Interconnect Exploration in Innovative Off-Chip Memories

This paper introduces a new DRAM design that enables fast and energy-efficient bulk data movement across subarrays in a DRAM chip. While bulk data movement is a key operation in many applications and operating systems, contemporary systems perform this movement inefficiently, by transferring data from DRAM to the processor, and then back to DRAM, across a narrow off-chip channel. The use of this narrow channel for bulk data movement results in high latency and energy consumption. Prior work proposed to avoid these high costs by exploiting the existing wide internal DRAM bandwidth for bulk data movement, but the limited connectivity of wires within DRAM allows fast data movement within only a single DRAM subarray. Each subarray is only a few megabytes in size, greatly restricting the range over which fast bulk data movement can happen within DRAM. We propose a new DRAM substrate, Low-Cost Inter-Linked Subarrays (LISA), whose goal is to enable fast and efficient data movement across a large range of memory at low cost. LISA adds low-cost connections between adjacent subarrays. By using these connections to interconnect the existing internal wires (bitlines) of adjacent subarrays, LISA enables wide-bandwidth data transfer across multiple subarrays with little (only 0.8%) DRAM area overhead. As a DRAM substrate, LISA is versatile, enabling an array of new applications. We describe and evaluate three such applications in detail: (1) fast inter-subarray bulk data copy, (2) in-DRAM caching using a DRAM architecture whose rows have heterogeneous access latencies, and (3) accelerated bitline precharging by linking multiple precharge units together. Our extensive evaluations show that each of LISA's three applications significantly improves performance and memory energy efficiency, and their combined benefit is higher than the benefit of each alone, on a variety of workloads and system configurations.

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Low-Cost Inter-Linked Subarrays (LISA): Enabling fast inter-subarray data movement in DRAM

Recently, both industry and academia have proposed many different roadmaps for the future of DRAM. Consequently, there is a growing need for an extensible DRAM simulator, which can be easily modified to judge the merits of today's DRAM standards as well as those of tomorrow. In this paper, we present Ramulator , a fast and cycle-accurate DRAM simulator that is built from the ground up for extensibility. Unlike existing simulators, Ramulator is based on a generalized template for modeling a DRAM system, which is only later infused with the specific details of a DRAM standard. Thanks to such a decoupled and modular design, Ramulator is able to provide out-of-the-box support for a wide array of DRAM standards: DDR3/4, LPDDR3/4, GDDR5, WIO1/2, HBM, as well as some academic proposals (SALP, AL-DRAM, TL-DRAM, RowClone, and SARP). Importantly, Ramulator does not sacrifice simulation speed to gain extensibility: according to our evaluations, Ramulator is 2.5 $\times$ faster than the next fastest simulator. Ramulator is released under the permissive BSD license.

/pdf/ramulator-a-fast-and-extensible-dram-simulator-31j8vxv1az.pdf

Weikun Yang

Papers

Ramulator: A Fast and Extensible DRAM Simulator