Journal ArticleDOI
A new method for determining the FET small-signal equivalent circuit
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In this article, a method to determine the small-signal equivalent circuit of FETs is proposed, which consists of a direct determination of both the extrinsic and intrinsic small signal parameters in a low-frequency band.Abstract:
A method to determine the small-signal equivalent circuit of FETs is proposed This method consists of a direct determination of both the extrinsic and intrinsic small-signal parameters in a low-frequency band This method is fast and accurate, and the determined equivalent circuit fits the S-parameters well up to 265 GHz >read more
Citations
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Journal ArticleDOI
Broad-band determination of the FET small-signal equivalent circuit
Manfred Berroth,R. Bosch +1 more
TL;DR: In this paper, a method to determine the broadband small-signal equivalent circuit of field effect transistors (FETs) is proposed based on an analytic solution of the equations for the Y parameters of the intrinsic device and allows direct determination of the circuit elements at any specific frequency or averaged over a frequency range.
Journal ArticleDOI
Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz
Yoshimi Yamashita,Akira Endoh,Keisuke Shinohara,Kohki Hikosaka,Toshiaki Matsui,Satoshi Hiyamizu,Takashi Mimura +6 more
TL;DR: In this article, a decananometer-gate pseudomorphic In/sub 0.52/Al/Sub 0.48/As/In/sub0.7/Ga/sub 1.3/As high-electron mobility transistors (HEMTs) with a very short gate-channel distance was presented.
Journal ArticleDOI
A new small-signal modeling approach applied to GaN devices
Anwar Jarndal,Gunter Kompa +1 more
TL;DR: In this article, a new method for extracting the parasitic elements of the GaN device is developed based on two steps, which are: 1) using cold S-parameter measurements, high-quality starting values for the extrinsic parameters that would place the extraction close to the global minimum of the objective function for the distributed equivalent circuit model are generated and 2) the optimal model parameter values are searched through optimization using the starting values already obtained.
Journal ArticleDOI
Design of Highly Efficient Broadband Class-E Power Amplifier Using Synthesized Low-Pass Matching Networks
Kenle Chen,Dimitrios Peroulis +1 more
TL;DR: A new methodology for designing and implementing high-efficiency broadband Class-E power amplifiers (PAs) using high-order low-pass filter-prototype is proposed, which provides optimized fundamental and harmonic impedances within an octave bandwidth (L-band).
Journal ArticleDOI
Importance of source and drain resistance to the maximum f/sub T/ of millimeter-wave MODFETs
Paul J. Tasker,B. Hughes +1 more
TL;DR: In this paper, it was shown that the high values of C/sub gd/ and G/sub ds/ combine with the high g/sub m/ to make terms involving the source and drain resistance significant.
References
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Journal ArticleDOI
Determination of the basic device parameters of a GaAs MESFET
TL;DR: In this paper, the active channel properties of a gallium arsenide (GaAs) metal-semiconductor field effect transistor (mesfet) were determined using simple analytical expressions developed in terms of the geometrical and material parameters of a device.
Proceedings ArticleDOI
A Technique for Predicting Large-Signal Performance of a GaAs MESFET
TL;DR: In this article, a method is described for accurately predicting the nonlinear microwave performance of GaAs MESFET devices using time-domain analysis and the experimentally characterized bias dependence of device-circuit model elements.
Journal ArticleDOI
Self-Consistent GaAs FET Models for Amplifier Design and Device Diagnostics
W.R. Curtice,R.L. Camisa +1 more
TL;DR: In this article, a procedure for producing accurate and unique small-signal equivalent circuit models for carrier-mounted GaAs FET's is presented, which utilizes zero drain-source bias S parmeter tests to determine accurate values of carrier parasitics, and dc measurements to evaluate the FETs gate, source, and drain resistances.
Journal ArticleDOI
Current saturation and small-signal characteristics of GaAs field-effect transistors
P.L. Hower,N.G. Bechtel +1 more
TL;DR: In this paper, the model previously proposed by Turner and Wilson is developed in detail and compared with experiment, and a y-parameter analysis is presented that permits calculation of transconductance and the unity current gain frequency f T.
Journal ArticleDOI
Simplified GaAs m.e.s.f.e.t. model to 10 GHz
TL;DR: In this paper, a simplified design-oriented equivalent circuit for the GaAs m.e.t.s. is presented, and its relation to a common, but more complex, model is derived and characteristics are compared.