Journal ArticleDOI
Selected failure mechanisms of modern power modules
TLDR
This compendium provides the main failure modes, the physical or chemical processes that lead to the failure, and reports some major technological countermeasures, which are used for realizing the very stringent reliability requirements imposed in particular by the electrical traction applications.About:
This article is published in Microelectronics Reliability.The article was published on 2002-04-01. It has received 862 citations till now. The article focuses on the topics: Power module.read more
Citations
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Journal ArticleDOI
Condition Monitoring for Device Reliability in Power Electronic Converters: A Review
TL;DR: The state of the art in condition monitoring for power electronics can be found in this paper, where the authors present a review of the current state-of-the-art in power electronics condition monitoring.
Journal ArticleDOI
Transitioning to Physics-of-Failure as a Reliability Driver in Power Electronics
Huai Wang,Marco Liserre,Frede Blaabjerg,Peter de Place Rimmen,John B. Jacobsen,Thorkild Kvisgaard,Jorn Landkildehus +6 more
TL;DR: In this article, the three major aspects of power electronics reliability are discussed, respectively, which cover physics-of-failure analysis of critical power electronic components, state-ofthe-art design for reliability process and robustness validation, and intelligent control and condition monitoring to achieve improved reliability under operation.
Journal ArticleDOI
Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling
Vanessa Smet,Francois Forest,J.-J. Huselstein,Frédéric Richardeau,Zoubir Khatir,Stéphane Lefebvre,Mounira Berkani +6 more
TL;DR: An experimental study on the ageing of insulated-gate bipolar transistor (IGBT) power modules shows that ageing mechanisms mainly concern wire bonds and emitter metallization, with gradual impact depending on protocol severity.
Journal ArticleDOI
Study and Handling Methods of Power IGBT Module Failures in Power Electronic Converter Systems
TL;DR: An overview of the major failure mechanisms of IGBT modules and their handling methods in power converter systems improving reliability is presented in this article, where fault-tolerant strategies for improving the reliability of power electronic systems under field operation are explained and compared in terms of performance and cost.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Proceedings Article
Microelectronics reliability
TL;DR: In this article, the importance of the involvement of the design and manufacturing team in achieving reliability of microelectronic devices is highlighted. And a method of verifying reliability goals through calculation of failure rates based on life test parameters is described.
Book
Influence of Temperature on Microelectronics and System Reliability: A Physics of Failure Approach
TL;DR: In this article, the authors present microelectronic device failure mechanisms in terms of their dependence on steady state temperature, temperature cycle, temperature gradient, and rate of change of temperature at the chip and package level.
Journal ArticleDOI
Reliability and lifetime evaluation of different wire bonding technologies for high power IGBT modules
TL;DR: In this article, the potential of these technologies to enhance module reliability and lifetime through a power cycling test is assessed through failure analysis results and the failure mechanisms related to each technology are explained in detail.