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Bevan M. Baas

Researcher at University of California, Davis

Publications -  89
Citations -  2767

Bevan M. Baas is an academic researcher from University of California, Davis. The author has contributed to research in topics: Throughput (business) & Clock rate. The author has an hindex of 27, co-authored 85 publications receiving 2541 citations. Previous affiliations of Bevan M. Baas include Stanford University & Qualcomm Atheros.

Papers
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Journal ArticleDOI

A low-power, high-performance, 1024-point FFT processor

TL;DR: This paper presents an energy-efficient, single-chip, 1024-point fast Fourier transform (FFT) processor, which has been fabricated in a standard 0.7 /spl mu/m CMOS process and is fully functional on first-pass silicon.
Journal ArticleDOI

Scaling equations for the accurate prediction of CMOS device performance from 180 nm to 7 nm

TL;DR: This work curve fit second and third-order polynomials to circuit delay, energy, and power dissipation results based on HSpice simulations utilizing the Predictive Technology Model (PTM) and International Technology Roadmap for Semiconductors (ITRS) models.
Journal ArticleDOI

A 167-Processor Computational Platform in 65 nm CMOS

TL;DR: A 167-processor computational platform consists of an array of simple programmable processors capable of per-processor dynamic supply voltage and clock frequency scaling, three algorithm-specific processors, and three 16 KB shared memories; and is implemented in 65 nm CMOS as discussed by the authors.
Proceedings ArticleDOI

Split-Row: A Reduced Complexity, High Throughput LDPC Decoder Architecture

TL;DR: The proposed split-row method makes column processing parallelism easier to exploit, doubles available row processor parallelism, and significantly simplifies row processors - which results in smaller area, higher speeds, and lower energy dissipation.
Proceedings ArticleDOI

An integrated 802.11a baseband and MAC processor

TL;DR: The 0.25/spl mu/m CMOS mixed-signal baseband and MAC processor for the IEEE 802.11a WLAN standard in 0.8 mm/sup 2/ and contains 4.0M transistors in a 196-pin BGA package.