E
Eajm Erwin Bente
Researcher at Eindhoven University of Technology
Publications - 91
Citations - 1104
Eajm Erwin Bente is an academic researcher from Eindhoven University of Technology. The author has contributed to research in topics: Laser & Optical amplifier. The author has an hindex of 17, co-authored 91 publications receiving 1039 citations.
Papers
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Journal ArticleDOI
Generic foundry model for InP-based photonics
MK Meint Smit,Xjm Xaveer Leijtens,Eajm Erwin Bente,van der Jjgm Jos Tol,Hpmm Huub Ambrosius,D.J. Robbins,MJ Michael Wale,Norbert Grote,Martin Schell +8 more
TL;DR: Similarities and differences between photonic and microelectronic integration technology are discussed and a vision of the development of InP-based photonic integration in the coming decade is given as mentioned in this paper.
Journal ArticleDOI
A III-V-on-Si ultra-dense comb laser.
Zhechao Wang,Kasper Van Gasse,V Valentina Moskalenko,Sylwester Latkowski,Eajm Erwin Bente,Bart Kuyken,Gunther Roelkens +6 more
TL;DR: A demonstration of a III-V-on-Si comb laser that can function as a compact, low-cost frequency comb generator after frequency stabilization and the use of low-loss passive silicon waveguides enables the integration of a long laser cavity, which enables the laser to be locked in the passive mode at a record-low 1 GHz repetition rate.
Journal ArticleDOI
Self assembled InAs/InP quantum dots for telecom applications in the 1.55 µm wavelength range : wavelength tuning, stacking, polarization control, and lasing
R Richard Nötzel,S Sanguan Anantathanasarn,PJ René van Veldhoven,Fwm Frank van Otten,TJ Tom Eijkemans,Achim Trampert,Biswarup Satpati,Yohan Barbarin,Eajm Erwin Bente,YS Yok-Siang Oei,Tjibbe de Vries,EJ Erik Jan Geluk,E Barry Smalbrugge,MK Meint Smit,JH Joachim Wolter +14 more
TL;DR: In this paper, the thickness of GaAs interlayers is used to tune the emission wavelength of InAs/InP QDs in the 1.55 µm wavelength range.
Journal ArticleDOI
Observation of Q-switching and mode-locking in two-section InAs-InP (100) quantum dot lasers at 1.53 µm
Martijn J. R. Heck,Eajm Erwin Bente,E Barry Smalbrugge,YS Yok-Siang Oei,MK Meint Smit,S Sanguan Anantathanasarn,R Richard Nötzel +6 more
TL;DR: In this article, the first observation of passive mode-locking in two-section quantum-dot laser operating at wavelengths around 1.55 µm is reported and the complete output spectrum is shown to be coherent over 10 nm.
Proceedings Article
MOVPE waveguide regrowth in InGaAs/InP with extremely low butt-joint loss
Jjm Hans Binsma,M. van Geemert,F. Heinrichsdorff,T. van Dongen,RG Ronald Broeke,Eajm Erwin Bente,MK Meint Smit +6 more
TL;DR: In this paper, transparant InGaAsP/InP waveguides were grown using a two-step MOVPE process and the propagation loss in the waveguide which were grown in the first step and in the second step showed no significant difference.