F
Fabio Sebastiano
Researcher at Delft University of Technology
Publications - 133
Citations - 3535
Fabio Sebastiano is an academic researcher from Delft University of Technology. The author has contributed to research in topics: CMOS & Quantum computer. The author has an hindex of 27, co-authored 119 publications receiving 2516 citations. Previous affiliations of Fabio Sebastiano include NXP Semiconductors.
Papers
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Journal ArticleDOI
A 1.8 $\mu$ W 60 nV $/\surd$ Hz Capacitively-Coupled Chopper Instrumentation Amplifier in 65 nm CMOS for Wireless Sensor Nodes
TL;DR: A low-power precision instrumentation amplifier intended for use in wireless sensor nodes that employs a capacitively-coupled chopper topology to achieve a rail-to-rail input common-mode range as well as high power efficiency and bio-potential sensing.
Journal ArticleDOI
Cryo-CMOS Circuits and Systems for Quantum Computing Applications
Bishnu Patra,Rosario M. Incandela,Jeroen P. G. van Dijk,Harald Homulle,Lin Song,Mina Shahmohammadi,Robert Bogdan Staszewski,Andrei Vladimirescu,Masoud Babaie,Fabio Sebastiano,Edoardo Charbon +10 more
TL;DR: In this paper, a low-noise amplifier for spin-qubit RF-reflectometry readout and a class-F2,3 digitally controlled oscillator required to manipulate the state of qubits are proposed.
Proceedings ArticleDOI
Cryo-CMOS for quantum computing
Edoardo Charbon,Fabio Sebastiano,Andrei Vladimirescu,Harald Homulle,Stefan Visser,Lin Song,Rosario M. Incandela +6 more
TL;DR: The need for a new generation of deep-submicron CMOS circuits operating at deep-cryogenic temperatures to achieve the performance required in a fault-tolerant qubit system is advocated.
Journal ArticleDOI
Characterization and Compact Modeling of Nanometer CMOS Transistors at Deep-Cryogenic Temperatures
Rosario M. Incandela,Lin Song,Harald Homulle,Edoardo Charbon,Andrei Vladimirescu,Fabio Sebastiano +5 more
TL;DR: In this paper, a detailed understanding of the device physics at deep-cryogenic temperatures was developed based on a compact model based on MOS11 and PSP, and the accuracy and validity of the compact models were demonstrated by comparing time and frequency-domain simulations of complex circuits, such as a ring oscillator and a low-noise amplifier, with the measurements at 4 K.
Proceedings ArticleDOI
A 1.2V 10µW NPN-based temperature sensor in 65nm CMOS with an inaccuracy of ±0.2°C (3s) from −70°C to 125°C
Fabio Sebastiano,Lucien J. Breems,Kofi A. A. Makinwa,Salvatore Drago,Domine M. W. Leenaerts,Bram Nauta +5 more
TL;DR: This paper describes a temperature sensor realized in a 65nm CMOS process with a batch-calibrated inaccuracy of ±0.5°C (3s) and a trimmed inaccuracy from −70°C to 125°C that represents a 10-fold improvement in accuracy compared to other deep-submicron temperature sensors.