The task of quantizing general relativity raises serious questions about the meaning of the present formulation and interpretation of quantum mechanics when applied to so fundamental a structure as the space-time geometry itself. This paper seeks to clarify the foundations of quantum mechanics. It presents a reformulation of quantum theory in a form believed suitable for application to general relativity. The aim is not to deny or contradict the conventional formulation of quantum theory, which has demonstrated its usefulness in an overwhelming variety of problems, but rather to supply a new, more general and complete formulation, from which the conventional interpretation can be deduced. The relationship of this new formulation to the older formulation is therefore that of a metatheory to a theory, that is, it is an underlying theory in which the nature and consistency, as well as the realm of applicability, of the older theory can be investigated and clarified.

"relative State" Formulation of Quantum Mechanics

International Technology Roadmap for Semiconductors 2003の要求清浄度について － シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について －

The once-ephemeral radiation-induced soft error has become a key threat to advanced commercial electronic components and systems. Left unchallenged, soft errors have the potential for inducing the highest failure rate of all other reliability mechanisms combined. This article briefly reviews the types of failure modes for soft errors, the three dominant radiation mechanisms responsible for creating soft errors in terrestrial applications, and how these soft errors are generated by the collection of radiation-induced charge. The soft error sensitivity as a function of technology scaling for various memory and logic components is then presented with a consideration of which applications are most likely to require soft error mitigation.

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Radiation-induced soft errors in advanced semiconductor technologies

A novel design technique is proposed for storage elements which are insensitive to radiation-induced single-event upsets. This technique is suitable for implementation in high density ASICs and static RAMs using submicron CMOS technology.

Upset hardened memory design for submicron CMOS technology

Physical mechanisms responsible for nondestructive single-event effects in digital microelectronics are reviewed, concentrating on silicon MOS devices and integrated circuits. A brief historical overview of single-event effects in space and terrestrial systems is given, and upset mechanisms in dynamic random access memories, static random access memories, and combinational logic are detailed. Techniques for mitigating single-event upset are described, as well as methods for predicting device and circuit single-event response using computer simulations. The impact of technology trends on single-event susceptibility and future areas of concern are explored.

Basic mechanisms and modeling of single-event upset in digital microelectronics

The increased operating frequencies, geometry shrinking and power supply reduction that accompany the process of very deep submicron scaling, affect the reliable operation of very deep submicron ICs. The effects of various noise sources are becoming of great concern. In particularly, it is predicted that single event upsets induced by alpha particles and cosmic radiation will become a cause of unacceptable error rates in future very deep submicron and nanometer technologies. This problem, concerning in the past more often parts used in space, will affect future ICs at sea level. This challenging problem has to be solved otherwise technological progress will be blocked soon. Thus, fault tolerant design is becoming necessary, even for commodity applications. But economic constraints of commodity applications exclude the use of traditional, high-cost fault tolerant techniques. This work uses time redundancy techniques to derive low cost soft-error tolerant implementations for logic networks.

Time redundancy based soft-error tolerance to rescue nanometer technologies

In nanometric technologies, circuits are increasingly sensitive to various kinds of perturbations. Soft errors, a concern for space applications in the past, became a reliability issue at ground level. Alpha particles and atmospheric neutrons induce single-event upsets (SEU), affecting memory cells, latches, and flip-flops, and single-event transients (SET), initiated in the combinational logic and captured by the latches and flip-flops associated to the outputs of this logic. To face this challenge, a designer must dispose a variety of soft error mitigation schemes adapted to various circuit structures, design architectures, and design constraints. In this paper, we describe various SEU and SET mitigation schemes that could help the designer meet her or his goals.

Design for soft error mitigation

This paper presents an overview of a comprehensive collection of on-line testing techniques for VLSI. Such techniques are for instance: self-checking design, allowing high quality concurrent checking by means of hardware cost drastically lower than duplication; signature monitoring, allowing low cost concurrent error detection for FSMs; on-line monitoring of reliability relevant parameters such as current, temperature, abnormal delay, signal activity during steady state, radiation dose, clock waveforms, etc.; exploitation of standard BIST, or implementation of BIST techniques specific to on-line testing (Transparent BIST, Built-In Concurrent Self-Test,...); exploitation of scan paths to transfer internal states for performing various tasks for on-line testing or fault tolerance; fail-safe techniques for VLSI, avoiding complex fail-safe interfaces using discrete components; radiation hardened designs, avoiding expensive fabrication process such as SOI, etc.

On-Line Testing for VLSI—A Compendium of Approaches

This book provides a comprehensive presentation of the most advanced research results and technological developments enabling understanding, qualifying and mitigating the soft errors effect in advanced electronics, including the fundamental physical mechanisms of radiation induced soft errors, the various steps that lead to a system failure, the modelling and simulation of soft error at various levels (including physical, electrical, netlist, event driven, RTL, and system level modelling and simulation), hardware fault injection, accelerated radiation testing and natural environment testing, soft error oriented test structures, process-level, device-level, cell-level, circuit-level, architectural-level, software level and system level soft error mitigation techniques. The book contains a comprehensive presentation of most recent advances on understanding, qualifying and mitigating the soft error effect in advanced electronic systems, presented by academia and industry experts in reliability, fault tolerance, EDA, processor, SoC and system design, and in particular, experts from industries that have faced the soft error impact in terms of product reliability and related business issues and were in the forefront of the countermeasures taken by these companies at multiple levels in order to mitigate the soft error effects at a cost acceptable for commercial products. In a fast moving field, where the impact on ground level electronics is very recent and its severity is steadily increasing at each new process node, impacting one after another various industry sectors (as an example, the Automotive Electronics Council comes to publish qualification requirements on soft errors), research and technology developments and industrial practices have evolve very fast, outdating the most recent books edited at 2004.

Michael Nicolaidis

Papers

Upset hardened memory design for submicron CMOS technology

Time redundancy based soft-error tolerance to rescue nanometer technologies

Design for soft error mitigation

On-Line Testing for VLSI—A Compendium of Approaches

Soft Errors in Modern Electronic Systems