R
Ramakrishna Vetury
Researcher at RF Micro Devices
Publications - 51
Citations - 3547
Ramakrishna Vetury is an academic researcher from RF Micro Devices. The author has contributed to research in topics: High-electron-mobility transistor & Gallium nitride. The author has an hindex of 21, co-authored 50 publications receiving 3189 citations. Previous affiliations of Ramakrishna Vetury include University of California, Santa Barbara.
Papers
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The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
TL;DR: In this article, the authors show that the cause of current collapse is a charging up of a second virtual gate, physically located in the gate drain access region, thus acting as a negatively charged virtual gate.
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Polarization-induced charge and electron mobility in algan/gan heterostructures grown by plasma-assisted molecular-beam epitaxy
I. P. Smorchkova,C. R. Elsass,J. P. Ibbetson,Ramakrishna Vetury,B. Heying,Paul T. Fini,E. Haus,Steven P. DenBaars,James S. Speck,Umesh K. Mishra +9 more
TL;DR: In this article, the formation of the 2DEG in unintentionally doped AlxGa1−xN/GaN (x⩽0.31) heterostructures grown by rf plasma-assisted molecular-beam epitaxy is investigated.
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Anisotropic epitaxial lateral growth in GaN selective area epitaxy
D. Kapolnek,Stacia Keller,Ramakrishna Vetury,Robert D. Underwood,Peter Kozodoy,S. P. Den Baars,Umesh K. Mishra +6 more
TL;DR: In this paper, the lateral mask overgrowth in GaN selective epitaxy has been studied using linear mask features and the lateral growth varies between its maximum and minimum over a 30° angular span and exhibits hexagonal symmetry.
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Current instabilities in GaN-based devices
I. Daumiller,Didier Theron,Christophe Gaquiere,Andrei Vescan,R. Dietrich,A. Wieszt,Helmut Leier,Ramakrishna Vetury,Umesh K. Mishra,I. P. Smorchkova,Sarah L. Keller,Chanh Nguyen,Erhard Kohn +12 more
TL;DR: In this paper, the full channel charge of an AlGaN/GaN heterostructure FET may be completely depleted under specific bias conditions, where the output current amplitude is drastically reduced.
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Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers
TL;DR: In this article, Schottky barrier diodes (SBDs) were used to investigate leakage currents, threshold voltages, and deep traps of AlGaN/GaN heterostructure wafers with different concentrations of carbon in the GaN buffer layer.