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Umesh K. Mishra
Researcher at University of California, Santa Barbara
Publications - 928
Citations - 46186
Umesh K. Mishra is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Gallium nitride & High-electron-mobility transistor. The author has an hindex of 96, co-authored 912 publications receiving 42012 citations. Previous affiliations of Umesh K. Mishra include North Carolina State University & University of California.
Papers
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AlGaN/GaN HEMTs-an overview of device operation and applications
TL;DR: This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems of the AlGaN/GaN high-electron mobility transistor.
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GaN-Based RF Power Devices and Amplifiers
TL;DR: The latest developments of the GaN HEMT technologies, including material growth, processing technologies, device epitaxial structures and MMIC designs, are reviewed to achieve the state-of-the-art microwave and millimeter-wave performance.
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The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
TL;DR: In this article, the authors show that the cause of current collapse is a charging up of a second virtual gate, physically located in the gate drain access region, thus acting as a negatively charged virtual gate.
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30-W/mm GaN HEMTs by field plate optimization
Yifeng Wu,Adam William Saxler,Marcia Moore,R.P. Smith,Scott Sheppard,P. Chavarkar,T. Wisleder,Umesh K. Mishra,P. Parikh +8 more
TL;DR: In this article, a GaN high-electron-mobility-transistors (HEMTs) on SiC were fabricated with field plates of various dimensions for optimum performance, and an enhancement in radio frequency (RF) current-voltage swings was achieved with acceptable compromise in gain, through both reduction in the trapping effect and increase in breakdown voltages.
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Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
TL;DR: In this paper, the origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally.