The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers, including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a non-conductive distributed bragg reflector coupled to the plurality of semiconductor layers, reflecting the light from the active layer; and a first light-transmitting film coupled to the distributed bragg reflector from a side opposite to the plurality of semiconductor layers with respect to the non-conductive distributed bragg reflector, with the first light-transmitting film having a refractive index lower than an effective refractive index of the distributed bragg reflector.

Semiconductor Light Emitting Device

A method for forming a PECVD deposited ashable hardmask (AHM) with less than 30% H content at a process temperature below 500° C., e.g., about 400° C. produces low H content hard masks having the property of high selectivity of the hard mask film to the underlying layers for successful integration of the film, and are suitable for use with 193 nm generation and below lithography schemes wherein high selectivity of the hard mask to the underlying layers is required. The low temperature, low H films are produced by use of a pulsed film hydrocarbon precursor plasma treatment that reduces the amount of hydrogen incorporated in the film and therefore drives down the etch rate of the hard mask thus increasing the selectivity. The lower temperature process also allows reduction of the overall thermal budget for a wafer.

Pulsed PECVD method for modulating hydrogen content in hard mask

Low Loading of RhxP and RuP on N, P Codoped Carbon as Two Trifunctional Electrocatalysts for the Oxygen and Hydrogen Electrode Reactions

Ruthenium sulfide nanoparticles as a new pseudocapacitive material for supercapacitor

A novel approach of mechanical chemical grinding

Defect-free fabrication for single crystal silicon substrate by chemo-mechanical grinding

Monoclinic Li2TiO3 nano-particles via hydrothermal reaction: Processing and structure

According to the present invention, the state of a liquid fuel such as diesel fuel is made a supercritical state by raising the pressure and the temperature of the fuel above the critical pressure and temperature. Then, the fuel is injected from the fuel injection valve into the combustion chamber of the engine in the supercritical state. When the fuel in the supercritical state is injected into the combustion chamber of the engine, it forms an extremely fine uniform mist in the entire combustion chamber. Therefore, the combustion in the engine is largely improved.

Method and a device for supplying fuel to an internal combustion engine

This invention provides carbon composite materials, which comprise metal carbide particles, at least the particle surfaces or the entirety of which are metal carbides, synthesized in situ from a metal source, i.e., at least one member selected from the group comprising metal particles, metal oxide particles, and composite metal oxide particles, and a carbon source, i.e., a thermosetting resin, dispersed in a carbon, carbon fiber, or carbon/carbon fiber matrix, and contain no free metal particles. This invention also provides a method for producing such composite carbon materials, which enables the production of carbon composite materials having a high coefficient of friction, high thermostability, and abrasion resistance.

Carbon composite materials comprising particles of metal carbides dispersed therein and method for producing the same

Basalt filament is manufactured such that the fiber diameter can be controlled and the filament is not severed during winding. A network former and a glass modifier are formed and maintained with respect to basalt rock ore, and the crystallization and binding of basalt fiber are inhibited, the heat-resistance property of basalt fiber is greatly improved from the conventional 750° C. to 850 or 900° C., and significant cost reduction is achieved over conventional products. The method includes: grinding basalt rock as a material; washing a resultant ground rock; melting the ground rock that has been washed; transforming a molten product into fiber; and drawing the fiber in an aligned manner, and winding it. The temperature of the molten product in the melting step is 1400 to 1650° C., and log η is 2.15 to 2.35 dPa·s and preferably 2.2 to 2.3 dPa·s, where η is the viscosity of the molten product.

Sumio Kamiya

Papers

Defect-free fabrication for single crystal silicon substrate by chemo-mechanical grinding

Monoclinic Li2TiO3 nano-particles via hydrothermal reaction: Processing and structure

Method and a device for supplying fuel to an internal combustion engine

Carbon composite materials comprising particles of metal carbides dispersed therein and method for producing the same

Method for manufacturing basalt fiber