Journal ArticleDOI
Emerging Memory Technologies: Recent Trends and Prospects
Shimeng Yu,Pai-Yu Chen +1 more
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TLDR
This tutorial introduces the basics of emerging nonvolatile memory (NVM) technologies including spin-transfer-torque magnetic random access memory (STTMRAM), phase-change randomAccess memory (PCRAM), and resistive random accessMemory (RRAM).Abstract:
This tutorial introduces the basics of emerging nonvolatile memory (NVM) technologies including spin-transfer-torque magnetic random access memory (STTMRAM), phase-change random access memory (PCRAM), and resistive random access memory (RRAM). Emerging NVM cell characteristics are summarized, and device-level engineering trends are discussed. Emerging NVM array architectures are introduced, including the onetransistor?one-resistor (1T1R) array and the cross-point array with selectors. Design challenges such as scaling the write current and minimizing the sneak path current in cross-point array are analyzed. Recent progress on megabit-to gigabit-level prototype chip demonstrations is summarized. Finally, the prospective applications of emerging NVM are discussed, ranging from the last-level cache to the storage-class memory in the memory hierarchy. Topics of three-dimensional (3D) integration and radiation-hard NVM are discussed. Novel applications beyond the conventional memory applications are also surveyed, including physical unclonable function for hardware security, reconfigurable routing switch for field-programmable gate array (FPGA), logic-in-memory and nonvolatile cache/register/flip-flop for nonvolatile processor, and synaptic device for neuro-inspired computing.read more
Citations
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Journal ArticleDOI
The future of electronics based on memristive systems
TL;DR: The state of the art in memristor-based electronics is evaluated and the future development of such devices in on-chip memory, biologically inspired computing and general-purpose in-memory computing is explored.
Journal ArticleDOI
Neuro-Inspired Computing With Emerging Nonvolatile Memorys
TL;DR: This comprehensive review summarizes state of the art, challenges, and prospects of the neuro-inspired computing with emerging nonvolatile memory devices and presents a device-circuit-algorithm codesign methodology to evaluate the impact of nonideal device effects on the system-level performance.
Journal ArticleDOI
Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide
Vinod K. Sangwan,Hong Sub Lee,Hadallia Bergeron,Itamar Balla,Megan E. Beck,Kan Sheng Chen,Mark C. Hersam +6 more
TL;DR: The seamless integration of a memristor and transistor into one multi-terminal device could enable complex neuromorphic learning and the study of the physics of defect kinetics in two-dimensional materials.
Journal ArticleDOI
Designing crystallization in phase-change materials for universal memory and neuro-inspired computing
TL;DR: This Review focuses on the crystallization mechanisms of PCMs as well as the design principles to achieve PCMs with high switching speeds and good data retention, which will aid the development of PCM-based universal memory and neuro-inspired devices.
Journal ArticleDOI
Recommended Methods to Study Resistive Switching Devices
Mario Lanza,H.-S. Philip Wong,Eric Pop,Daniele Ielmini,Dimitri Strukov,B. C. Regan,Luca Larcher,Marco A. Villena,Jianhua Yang,Ludovic Goux,Attilio Belmonte,Yuchao Yang,Francesco Maria Puglisi,Jinfeng Kang,Blanka Magyari-Köpe,Eilam Yalon,Anthony J. Kenyon,Mark Buckwell,Adnan Mehonic,Alexander L. Shluger,Haitong Li,Tuo-Hung Hou,Boris Hudec,Deji Akinwande,Ruijing Ge,Stefano Ambrogio,Juan Bautista Roldán,Enrique Miranda,Jordi Suñé,Kin Leong Pey,Xing Wu,Nagarajan Raghavan,Ernest Y. Wu,Wei Lu,Gabriele Navarro,Weidong Zhang,Huaqiang Wu,Run-Wei Li,Alexander W. Holleitner,Ursula Wurstbauer,Max C. Lemme,Ming Liu,Shibing Long,Qi Liu,Hangbing Lv,Andrea Padovani,Paolo Pavan,Ilia Valov,Xu Jing,Tingting Han,Kaichen Zhu,Shaochuan Chen,Fei Hui,Yuanyuan Shi +53 more
TL;DR: This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained.
References
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Journal ArticleDOI
Metal–Oxide RRAM
Hon-Sum Philip Wong,Heng-Yuan Lee,Shimeng Yu,Yu-Sheng Chen,Yi Wu,Pang-Shiu Chen,Byoungil Lee,Frederick T. Chen,Ming-Jinn Tsai +8 more
TL;DR: The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide resistive switching random access memory (RRAM) are discussed, with a focus on the use of RRAM for nonvolatile memory application.
Journal ArticleDOI
Phase Change Memory
H P Wong,S Raoux,Sangbum Kim,Jiale Liang,J P Reifenberg,Bipin Rajendran,Mehdi Asheghi,Kenneth E. Goodson +7 more
TL;DR: The physics behind this large resistivity contrast between the amorphous and crystalline states in phase change materials is presented and how it is being exploited to create high density PCM is described.
Journal ArticleDOI
Synaptic electronics: materials, devices and applications
TL;DR: In this paper, the recent progress of synaptic electronics is reviewed, with a focus on the use of synaptic devices for neuromorphic or brain-inspired computing.
Patent
Phase-change memory
TL;DR: In this paper, recent progress of phase change memory (PCM) is reviewed and innovations in the device structure, memory cell selector, and strategies for achieving multibit operation and 3D, multilayer high-density memory arrays are described.
Proceedings ArticleDOI
Bit Cost Scalable Technology with Punch and Plug Process for Ultra High Density Flash Memory
Hiroyasu Tanaka,M. Kido,K. Yahashi,M. Oomura,Ryota Katsumata,Masaru Kito,Yoshiaki Fukuzumi,Motoyuki Sato,Y. Nagata,Yasuyuki Matsuoka,Yoshihisa Iwata,Hideaki Aochi,Akihiro Nitayama +12 more
TL;DR: Bit-Cost Scalable (BiCS) technology is proposed which realizes a multi-stacked memory array with a few constant critical lithography steps regardless of number of stacked layer to keep a continuous reduction of bit cost.