Journal ArticleDOI
Enhancement of (In,Ga)N light-emitting diode performance by laser liftoff and transfer from sapphire to silicon
TLDR
In this article, a double-transfer technique using excimer laser liftoff and Pd-In transient-liquid phase bonding was used to transfer a light-emitting diodes (LEDs) fabricated on a sapphire growth substrate.Abstract:
(In,Ga)N light-emitting diodes (LEDs) fabricated on a sapphire growth substrate were successfully integrated onto Si substrates by a double-transfer technique using excimer laser liftoff and Pd-In transient-liquid-phase bonding. This transfer method resulted in a bonded LED heterostructure with the same orientation (p-side up) as the heterostructure before transfer from the sapphire growth substrate. Such a layer transfer approach enables a top and backside contact metallization scheme that reduces device series resistance, current crowding, and top electrode coverage area. Enhancement of the performance of the transferred LEDs was found in terms of the threshold voltage (at 20 mA) and the electroluminescence output from the front surface.read more
Citations
More filters
Patent
System comprising a semiconductor device and structure
Zvi Or-Bach,Brian Cronquist,Israel Beinglass,Jan Lodewijk de Jong,Deepak C. Sekar,Zeev Wurman +5 more
TL;DR: In this article, a system includes a semiconductor device consisting of a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single-crystalline silicon layer.
Patent
Semiconductor device and structure
Zvi Or-Bach,Brian Cronquist +1 more
TL;DR: In this paper, a first layer and a second layer of layer-transferred mono-crystallized silicon, where the first layer comprises a first plurality of horizontally-oriented transistors, and the second layer includes a second plurality of vertically oriented transistors.
Patent
Method for fabrication of a semiconductor device and structure
TL;DR: In this article, a method to process an Integrated Circuit device including processing a first layer of first transistors, then processing a metal layer overlaying the first layer and providing at least one connection to the first Transistors, and finally processing a second layer of second transistors overlaying a first metal layer, wherein the second metal layer is connected to provide power to at least 1 of the second Transistors.
Patent
Lattice-Mismatched Semiconductor Structures with Reduced Dislocation Defect Densities and Related Methods for Device Fabrication
Anthony J. Lochtefeld,Matthew T. Currie,Zhiyuan Cheng,James Fiorenza,G. Braithwaite,T. A. Langdo +5 more
TL;DR: In this paper, the fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations is discussed.
Patent
InP-Based Transistor Fabrication
TL;DR: In this paper, a dielectric layer may be deposited by ALD over a semiconductor layer including In and P. A channel layer is formed above a buffer layer having a lattice constant similar to a InP.
References
More filters
Book
Optical Processes in Semiconductors
TL;DR: Optical processes in semiconductors as mentioned in this paper, Optical Process in Semiconductors (OPP), Optical Process of Semiconductor (OPS) and Optical Process (OPI)
Book
Semiconductor device fundamentals
TL;DR: Semiconductor Models -- A General Introduction, Field Effect Introduction -- the J-FET and MESFET, and Electrostatics -- Mostly Qualitative Formulation.
Book
Optical processes in semiconductors
TL;DR: Optical processes in semiconductors as discussed by the authors, Optical Process in Semiconductors (OPP), Optical Process of Semiconductor (OPS) and Optical Process (OPI)
Journal ArticleDOI
Damage-free separation of GaN thin films from sapphire substrates
TL;DR: In this article, gallium nitride thin films were successfully separated and transferred onto Si substrates using single 38 ns KrF excimer laser pulses directed through the transparent substrate at fluences in the range of 400-600 mJ/cm2.
Journal ArticleDOI
Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off
William S. Wong,Timothy D. Sands,Nathan W. Cheung,Michael Kneissl,David P. Bour,Ping Mei,Linda T. Romano,N. M. Johnson +7 more
TL;DR: In this paper, a thin-film InGaN MQW LED structures, grown on sapphire substrates, were first bonded onto a Si support substrate with an ethyl cyanoacrylate-based adhesive.