抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Metamaterials, or engineered materials with rationally designed, subwavelength-scale building blocks, allow us to control the behavior of physical fields in optical, microwave, radio, acoustic, heat transfer, and other applications with flexibility and performance that are unattainable with naturally available materials. In turn, metasurfaces-planar, ultrathin metamaterials-extend these capabilities even further. Optical metasurfaces offer the fascinating possibility of controlling light with surface-confined, flat components. In the planar photonics concept, it is the reduced dimensionality of the optical metasurfaces that enables new physics and, therefore, leads to functionalities and applications that are distinctly different from those achievable with bulk, multilayer metamaterials. Here, we review the progress in developing optical metasurfaces that has occurred over the past few years with an eye toward the promising future directions in the field.

/pdf/planar-photonics-with-metasurfaces-1sfd62lis7.pdf

Planar Photonics with Metasurfaces

Optical generation of hot electrons in metallic structures and its potential as an alternative to conventional electron–hole separation in semiconductor devices are reviewed. The possibilities for realizing high conversion efficiencies with low fabrication costs are discussed along with challenges in terms of the materials, architectures and fabrication methods

Plasmon-induced hot-electron generation at nanoparticle/metal-oxide interfaces for photovoltaic and photocatalytic devices

In this paper, the use of nanostructured anode materials for rechargeable lithium-ion batteries (LIBs) is reviewed. Nanostructured materials such as nano-carbons, alloys, metal oxides, and metal sulfides/nitrides have been used as anodes for next-generation LIBs with high reversible capacity, fast power capability, good safety, and long cycle life. This is due to their relatively short mass and charge pathways, high transport rates of both lithium ions and electrons, and other extremely charming surface activities. In this review paper, the effect of the nanostructure on the electrochemical performance of these anodes is presented. Their synthesis processes, electrochemical properties, and electrode reaction mechanisms are also discussed. The major goals of this review are to give a broad overview of recent scientific researches and developments of anode materials using novel nanoscience and nanotechnology and to highlight new progresses in using these nanostructured materials to develop high-performance LIBs. Suggestions and outlooks on future research directions in this field are also given.

Recent developments in nanostructured anode materials for rechargeable lithium-ion batteries

Non-volatile memory devices are so named because they retain information when power is interrupted; thus they are important computer components. In this context, there has been considerable recent interest1,2 in developing non-volatile memories that use ferroelectric thin films—‘ferroelectric random access memories’, or FRAMs—in which information is stored in the polarization state of the ferroelectric material. To realize a practical FRAM, the thin films should satisfy the following criteria: compatibility with existing dynamic random access memory technologies, large remnant polarization (Pr) and reliable polarization-cycling characteristics. Early work focused on lead zirconate titanate (PZT) but, when films of this material were grown on metal electrodes, they generally suffered from a reduction of Pr (‘fatigue’) with polarity switching. Strontium bismuth tantalate (SBT) and related oxides have been proposed to overcome the fatigue problem3, but such materials have other shortcomings, such as a high deposition temperature. Here we show that lanthanum-substituted bismuth titanate thin films provide a promising alternative for FRAM applications. The films are fatigue-free on metal electrodes, they can be deposited at temperatures of ∼650 °C and their values of Pr are larger than those of the SBT films.

Lanthanum-substituted bismuth titanate for use in non-volatile memories

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

The search for alternative plasmonic materials with improved optical properties, easier fabrication and integration capabilities over those of the traditional materials such as silver and gold could ultimately lead to real-life applications for plasmonics and metamaterials. In this work, we show that titanium nitride could perform as an alternative plasmonic material in the visible and near-infrared regions. We demonstrate the excitation of surface-plasmon-polaritons on titanium nitride thin films and discuss the performance of various plasmonic and metamaterial structures with titanium nitride as the plasmonic component. We also show that titanium nitride could provide performance that is comparable to that of gold for plasmonic applications and can significantly outperform gold and silver for transformation-optics and some metamaterial applications in the visible and near-infrared regions.

https://engineering.purdue.edu/~aeb/pubs/Titanium%20nitride%20as%20a%20plasmonic%20material%20for%20visible%20and%20near-infrared%20wavelengths.pdf

Titanium nitride as a plasmonic material for visible and near-infrared wavelengths

A method of separating a thin film of GaN epitaxially grown on a sapphire substrate. The thin film is bonded to an acceptor substrate, and the sapphire substrate is laser irradiated with a scanned beam at a wavelength at which sapphire is transparent but the GaN is strongly absorbing, e.g., 248 nm. After the laser irradiation, the sample is heated above the melting point of gallium, i.e., above 30° C., and the acceptor substrate and attached GaN thin film are removed from the sapphire growth substrate. If the acceptor substrate is flexible, the GaN thin film can be scribed along cleavage planes of the GaN, and, when the flexible substrate is bent, the GaN film cleaves on those planes. Thereby, GaN lasers and other electronic and opto-electronic devices can be formed.

Separation of thin films from transparent substrates by selective optical processing

Due to their unique boundary conditions, nanowire heterostructures may exhibit defect-free interfaces even for systems with large lattice mismatch. Heteroepitaxial material integration is limited by lattice mismatches in planar systems, but we use a variational approach to show that nanowire heterostructures are more effective at relieving mismatch strain coherently. This is an equilibrium model based on the Matthews critical thickness in which the lattice mismatch strain is shared by the nanowire overlayer and underlayer, and could as well be partially accomodated by the

Equilibrium limits of coherency in strained nanowire heterostructures

Gallium nitride thin films grown on sapphire substrates were successfully separated and transferred onto Si substrates using single 38 ns KrF excimer laser pulses directed through the transparent substrate at fluences in the range of 400–600 mJ/cm2. The absorption of the 248 nm radiation by the GaN at the interface induces rapid thermal decomposition of the interfacial layer, yielding metallic Ga and N2 gas. The substrate is easily removed by heating above the Ga melting point of 30 °C. Scanning electron microscopy and x-ray diffraction of the GaN films before and after lift-off demonstrate that the structural quality of the GaN films is not altered by the separation and transfer process.

Timothy D. Sands

Papers

Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

Titanium nitride as a plasmonic material for visible and near-infrared wavelengths

Separation of thin films from transparent substrates by selective optical processing

Equilibrium limits of coherency in strained nanowire heterostructures

Damage-free separation of GaN thin films from sapphire substrates