Journal ArticleDOI
High-performance heat sinking for VLSI
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TLDR
In this paper, a water-cooled integral heat sink for silicon integrated circuits has been designed and tested at a power density of 790 W/cm2, with a maximum substrate temperature rise of 71°C above the input water temperature.Abstract:
The problem of achieving compact, high-performance forced liquid cooling of planar integrated circuits has been investigated. The convective heat-transfer coefficient h between the substrate and the coolant was found to be the primary impediment to achieving low thermal resistance. For laminar flow in confined channels, h scales inversely with channel width, making microscopic channels desirable. The coolant viscosity determines the minimum practical channel width. The use of high-aspect ratio channels to increase surface area will, to an extent, further reduce thermal resistance. Based on these considerations, a new, very compact, water-cooled integral heat sink for silicon integrated circuits has been designed and tested. At a power density of 790 W/cm2, a maximum substrate temperature rise of 71°C above the input water temperature was measured, in good agreement with theory. By allowing such high power densities, the heat sink may greatly enhance the feasibility of ultrahigh-speed VLSI circuits.read more
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References
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TL;DR: Anisotropic etching of silicon has become an important technology in silicon semiconductor processing during the past ten years and it will continue to gain stature and acceptance as standard processing technology in the next few years as discussed by the authors.
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Molten salts: Volume 4, part 2, chlorides and mixtures—electrical conductance, density, viscosity, and surface tension data
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