Journal ArticleDOI
The effects of microcrystal size and shape on the one phonon Raman spectra of crystalline semiconductors
TLDR
In this article, the effect of the exact shape of the microcrystal and the relationship between the width, shift and asymmetry of the Raman line is calculated and is in good agreement with available experimental data.About:
This article is published in Solid State Communications.The article was published on 1986-06-01. It has received 1957 citations till now. The article focuses on the topics: Raman spectroscopy & Raman scattering.read more
Citations
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The structural and luminescence properties of porous silicon
TL;DR: A large amount of work world wide has been directed towards obtaining an understanding of the fundamental characteristics of porous Si as mentioned in this paper, and the key importance of crystalline Si nanostructures in determining the behaviour of porous si is highlighted.
Journal ArticleDOI
Porous silicon: a quantum sponge structure for silicon based optoelectronics
TL;DR: The photoluminescence properties of porous silicon have attracted considerable research interest since their discovery in 1990 as discussed by the authors, which is due to excitonic recombination quantum confined in Si nanocrystals which remain after the partial electrochemical dissolution of silicon.
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Raman scattering study on anatase TiO2 nanocrystals
TL;DR: In this article, the evolution of the anatase phase in TiO2 nanocrystals during annealing was investigated using x-ray diffraction and the influence of interfacial vibrations on the Raman linewidth was also discussed.
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Raman Spectroscopy of Nanomaterials: How Spectra Relate to Disorder, Particle Size and Mechanical Properties
TL;DR: In this article, the authors provide a basic understanding of the information micro-Raman Spectroscopy (mRS) may yield when applied to nanomaterials, a generic term for describing nano-sized crystals and bulk homogeneous materials with a structural disorder at the nanoscale.
References
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Journal ArticleDOI
The one phonon Raman spectrum in microcrystalline silicon
H. Richter,Z. P. Wang,Lothar Ley +2 more
TL;DR: In this paper, a relaxation in the q-vector selection rule for the excitation of the Raman active optical phonons was proposed to increase the red shift and broadening of the signal from microcrystalline silicon films.
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Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type Semiconductors
TL;DR: In this paper, the effects of large static uniaxial stress along [001, [111], and [110] on the frequency of the optical phonons in Ge, GaAs, GaSb, InAs, and ZnSe using first-order Raman scattering were reported.
Journal ArticleDOI
Raman scattering from hydrogenated microcrystalline and amorphous silicon
Z Iqbal,Stan Veprek +1 more
TL;DR: In this paper, Raman scattering measurements on hydrogenated microcrystalline silicon prepared in a hydrogen plasma at deposition temperatures between approximately 65 and 400 degrees C are presented and discussed.
Journal ArticleDOI
Effects of As+ ion implantation on the Raman spectra of GaAs: ‘‘Spatial correlation’’ interpretation
TL;DR: In this paper, the authors studied Raman scattering from 〈100〉 GaAs samples implanted with 270-keV As+ ions with various fluences up to 3.2×1014 cm−2, and observed a softening and asymmetric broadening of the allowed LO phonon while the small symmetry forbidden TO phonon remains almost unchanged.