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Journal ArticleDOI

The one phonon Raman spectrum in microcrystalline silicon

H. Richter, +2 more
- 01 Aug 1981 - 
- Vol. 39, Iss: 5, pp 625-629
TLDR
In this paper, a relaxation in the q-vector selection rule for the excitation of the Raman active optical phonons was proposed to increase the red shift and broadening of the signal from microcrystalline silicon films.
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This article is published in Solid State Communications.The article was published on 1981-08-01. It has received 2059 citations till now. The article focuses on the topics: Raman spectroscopy & Dispersion relation.

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Citations
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Journal ArticleDOI

The effects of microcrystal size and shape on the one phonon Raman spectra of crystalline semiconductors

TL;DR: In this article, the effect of the exact shape of the microcrystal and the relationship between the width, shift and asymmetry of the Raman line is calculated and is in good agreement with available experimental data.
Journal ArticleDOI

Porous silicon: a quantum sponge structure for silicon based optoelectronics

TL;DR: The photoluminescence properties of porous silicon have attracted considerable research interest since their discovery in 1990 as discussed by the authors, which is due to excitonic recombination quantum confined in Si nanocrystals which remain after the partial electrochemical dissolution of silicon.
Journal ArticleDOI

Raman Spectroscopy of Nanomaterials: How Spectra Relate to Disorder, Particle Size and Mechanical Properties

TL;DR: In this article, the authors provide a basic understanding of the information micro-Raman Spectroscopy (mRS) may yield when applied to nanomaterials, a generic term for describing nano-sized crystals and bulk homogeneous materials with a structural disorder at the nanoscale.
Journal ArticleDOI

Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material

TL;DR: In this article, the basic lattice vibrations of 2D transition metal dichalcogenide (TMD) nanosheets are discussed, including highfrequency optical phonons, interlayer shear and layer breathing phonons.
References
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Journal ArticleDOI

Anharmonic Decay of Optical Phonons

TL;DR: In this article, an expression for the lifetime of an optical phonon decaying into two acoustical phonons, and its temperature dependence, was derived from perturbation theory, and the strength of the interaction was expressed in terms of the Gruneisen constant and the effect of a strain, equivalent to the instantaneous strain of a optical mode on the frequency spectrum of a linear chain with alternating force constants.
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Raman Scattering by Silicon and Germanium

TL;DR: Raman scattering from single-crystal Si and Ge at 300\ifmmode^\circ\else\text degree\fi{}K was measured using an argon laser as the exciting source as discussed by the authors.
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Adiabatic bond charge model for the phonons in diamond, Si, Ge, and α-Sn

TL;DR: In this article, an adiabatic bond charge model (BCM) for the lattice dynamics of diamond-type crystals is developed, which unifies elements of earlier models by Phillips and Martin, Keating, and Cochran.
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Temperature Dependence of Raman Scattering in Silicon

TL;DR: In this article, the authors measured the linewidth and the frequency of the q = 0 optical phonon in silicon over the temperature range of 20-770, and deduced an absolute halfwidth of 2.1
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Raman Spectra of Amorphous Si and Related Tetrahedrally Bonded Semiconductors

TL;DR: In this paper, the amorphous form of Si and several related, tetrahedrally bonded semiconductors (Ge, GaAs, GaP, InSb) were studied in the presence of Raman scattering.
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