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Bas A. Korevaar
Researcher at General Electric
Publications - 9
Citations - 382
Bas A. Korevaar is an academic researcher from General Electric. The author has contributed to research in topics: Cadmium telluride photovoltaics & Thin film. The author has an hindex of 4, co-authored 9 publications receiving 369 citations.
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Journal ArticleDOI
Strong broadband optical absorption in silicon nanowire films
Loucas Tsakalakos,Joleyn Balch,Jody Fronheiser,Min-Yi Shih,Stephen F. LeBoeuf,Matthew Pietrzykowski,Peter J. Codella,Bas A. Korevaar,Oleg Sulima,James A. Rand,Anilkumar Davuluru,Umakant D. Rapol +11 more
TL;DR: The broadband optical absorption properties of silicon nanowire (SiNW) films fabricated on glass substrates by wet etching and chemical vapor deposition (CVD) have been measured and found to be higher than solid thin films of equivalent thickness.
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Role of oxygen during CdTe growth for CdTe photovoltaic devices
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Cross‐sectional mapping of hole concentrations as a function of copper treatment in CdTe photo‐voltaic devices
TL;DR: In this paper, the carrier density and carrier density distribution within CdTe solar cells were studied with scanning capacitance microscopy (SCM) with varying copper treatment conditions, and it was found that the CdCl2 film is practically undoped after deposition, while after the copper step, the density distribution is non-uniform with a mixture of p-type and intrinsic grains.
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Side-by-side characterization of non-optimized and optimized CdS/CdTe solar cells on commercial transparent conductive oxide/glass
TL;DR: In this paper, the authors report on an extensive side-by-side characterization effort comparing the device properties of a highly optimized cell made on commercially available transparent conductive oxide/glass with a certified efficiency of 15.2% to a non-optimized device with a respectable efficiency of 13.0%.
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Tellurium-Rich CdTe, and the Effect of Tellurium Content on the Properties of CdTe
TL;DR: In this article, it was shown that the measured high carrier density is not because of doping of the CdTe base material but because of an integrated network of Te present as its own phase within the cdTe matrix.