C
Cheol Seong Hwang
Researcher at Seoul National University
Publications - 785
Citations - 34898
Cheol Seong Hwang is an academic researcher from Seoul National University. The author has contributed to research in topics: Thin film & Atomic layer deposition. The author has an hindex of 81, co-authored 740 publications receiving 28943 citations. Previous affiliations of Cheol Seong Hwang include Moscow Institute of Physics and Technology & Samsung.
Papers
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Journal ArticleDOI
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Deok-Hwang Kwon,Kyung-min Kim,Jae Hyuck Jang,Jong Myeong Jeon,Min Hwan Lee,Gun Hwan Kim,Xiang-Shu Li,Gyeong-Su Park,Bora Lee,Seungwu Han,Miyoung Kim,Cheol Seong Hwang +11 more
TL;DR: In situ current-voltage and low-temperature conductivity measurements confirm that switching occurs by the formation and disruption of Ti(n)O(2n-1) (or so-called Magnéli phase) filaments, which will provide a foundation for unravelling the full mechanism of resistance switching in oxide thin films.
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Multifunctional wearable devices for diagnosis and therapy of movement disorders
Dong Hee Son,Jongha Lee,Shutao Qiao,Roozbeh Ghaffari,Jaemin Kim,Ji Eun Lee,Changyeong Song,Seok Joo Kim,Dong Jun Lee,Samuel Woojoo Jun,Shixuan Yang,Minjoon Park,Jiho Shin,Kyungsik Do,Min-Cheol Lee,Kwanghun Kang,Cheol Seong Hwang,Nanshu Lu,Taeghwan Hyeon,Dae-Hyeong Kim +19 more
TL;DR: Materials, mechanics and designs for multifunctional, wearable-on-the-skin systems that address technical challenges via monolithic integration of nanomembranes fabricated with a top-down approach, nanoparticles assembled by bottom-up methods, and stretchable electronics on a tissue-like polymeric substrate are described.
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Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
Byung Joon Choi,Doo Seok Jeong,Seong Keun Kim,C. Rohde,Seol Choi,J. H. Oh,Honggon Kim,Cheol Seong Hwang,K. Szot,Rainer Waser,B. Reichenberg,S. Tiedke +11 more
TL;DR: In this article, the resistive switching mechanism of 20-to 57-nm-thick TiO2 thin films grown by atomic-layer deposition was studied by currentvoltage measurements and conductive atomic force microscopy.
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Emerging memories: resistive switching mechanisms and current status.
Doo Seok Jeong,Reji Thomas,Ram S. Katiyar,James F. Scott,Hermann Kohlstedt,A. Petraru,Cheol Seong Hwang +6 more
TL;DR: The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors.
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Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films
Min Hyuk Park,Young Hwan Lee,Han Joon Kim,Yu Jin Kim,Taehwan Moon,Keum Do Kim,Johannes Müller,Alfred Kersch,Uwe Schroeder,Thomas Mikolajick,Cheol Seong Hwang +10 more
TL;DR: The coupling of electric and thermal properties of the antiferroelectric thin films is expected to be useful for various applications, including energy harvesting/storage, solid-state-cooling, and infrared sensors.