U
Uwe Schroeder
Researcher at Dresden University of Technology
Publications - 227
Citations - 13221
Uwe Schroeder is an academic researcher from Dresden University of Technology. The author has contributed to research in topics: Ferroelectricity & Dielectric. The author has an hindex of 48, co-authored 193 publications receiving 8297 citations. Previous affiliations of Uwe Schroeder include Qimonda & Infineon Technologies.
Papers
More filters
Journal ArticleDOI
Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films
Min Hyuk Park,Young Hwan Lee,Han Joon Kim,Yu Jin Kim,Taehwan Moon,Keum Do Kim,Johannes Müller,Alfred Kersch,Uwe Schroeder,Thomas Mikolajick,Cheol Seong Hwang +10 more
TL;DR: The coupling of electric and thermal properties of the antiferroelectric thin films is expected to be useful for various applications, including energy harvesting/storage, solid-state-cooling, and infrared sensors.
Journal ArticleDOI
Incipient Ferroelectricity in Al-Doped HfO2 Thin Films
Stefan Mueller,Johannes Mueller,Aarti Singh,Stefan Riedel,Jonas Sundqvist,Uwe Schroeder,Thomas Mikolajick +6 more
TL;DR: In this paper, a structural investigation of the electrically characterized capacitors by grazing incidence X-ray diffraction is presented in order to gain further insight on the potential origin of ferroelectricity.
Journal ArticleDOI
Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors
Milan Pešić,Franz P. G. Fengler,Luca Larcher,Andrea Padovani,Tony Schenk,Everett D. Grimley,Xiahan Sang,James M. LeBeau,Stefan Slesazeck,Uwe Schroeder,Thomas Mikolajick +10 more
TL;DR: In this paper, the authors identify the root cause for the increase of the remnant polarization during the wake-up phase and subsequent polarization degradation with further cycling of a hafnium oxide-based ferroelectric random access memory (FeRAM).
Journal ArticleDOI
On the structural origins of ferroelectricity in HfO2 thin films
TL;DR: In this article, a structural study on the origin of ferroelectricity in Gd doped HfO2 thin films is presented, which provides unambiguous evidence for the existence of a non-centrosymmetric orthorhombic phase that can support spontaneous polarization.
Journal ArticleDOI
Stabilizing the ferroelectric phase in doped hafnium oxide
Michael J. Hoffmann,Uwe Schroeder,Tony Schenk,Takao Shimizu,Hiroshi Funakubo,Osami Sakata,Osami Sakata,Darius Pohl,Maximilian Drescher,Christoph Adelmann,Robin Materlik,Alfred Kersch,Thomas Mikolajick +12 more
TL;DR: The ferroelectric properties and crystal structure of doped HfO2 thin films were investigated for different thicknesses, electrode materials, and annealing conditions in this paper.