Young Hwan Lee

TL;DR: The coupling of electric and thermal properties of the antiferroelectric thin films is expected to be useful for various applications, including energy harvesting/storage, solid-state-cooling, and infrared sensors.

TL;DR: In this article, the advantages of fluorite-structure ferroelectrics for memory applications are reviewed from a material's point of view, and the critical issues of wake-up effect and insufficient endurance are examined, and potential solutions are subsequently discussed.

TL;DR: The experimental observations on polymorphism in nanoscale HfO2-ZrO2 solid solution thin films of a wide range of film compositions and thicknesses are comprehensively related to the theoretical predictions based on a thermodynamic surface energy model, which can semi-quantitatively explain the experimental results on the phase-evolution.

TL;DR: The appearance of ferroelectric (FE) and anti-ferroElectric (AFE) properties in HfO2-based thin films is highly intriguing in terms of both the scientific context and practical application in various electronic and energy-related devices.

TL;DR: In this paper, the degradation of ferroelectric properties of atomic layer deposited Hf0.5Zr 0.5O2 films with increasing thickness was mitigated by inserting 1'nm-thick Al2O3 interlayer at middle position of the thickness of the FE film.