E. Bassous

TL;DR: This paper considers the design, fabrication, and characterization of very small Mosfet switching devices suitable for digital integrated circuits, using dimensions of the order of 1 /spl mu/.

Abstract: This paper considers the design, fabrication, and characterization of very small MOSFET switching devices suitable for digital integrated circuits using dimensions of the order of 1μ. Scaling relationships are presented which show how a conventional MOSFET can be reduced in size. An improved small device structure is presented that uses ion implantation to proVide shallow source and drain regions and a nonuniform substrate doping profile. Onedimensional models are used to predict the substrate doping profile and the corresponding threshold voltage versus source voltage characteristic. A two-dimensional current transport model is used to predict the relative degree of short-channel effects for different device parameter combinations. Polysilicon-gate MOSFETs with channel lengths as short as 0.5μ were fabricated, and the device characteristics measured and compared with predicted values. Ibe performance improvement expected from using these very small devices in highly miniaturized integrated circuits is projected. Reprintedfrom the IEEE Journal of Solid-State Circuits, Vol. SC-9, October 1974, pp. 256-268.]

TL;DR: Moore's Law was first articulated in a paper by Gordon Moore in 1965 and was in effect being followed by the semiconductor industry since the early 1960's as discussed by the authors. But of course learning exactly how to make transistors smaller in a way that could be done practically in high volume manufacturing would take time.

TL;DR: Ion implantation allows the fabrication of very small MOSFET switching devices with considerably thicker gate insulators as mentioned in this paper, which can reduce the capacitance from the source and drain to the substrate and to the gate by more than a factor of two compared to conventional structures.