Failure modes and mechanisms of AlGaN/GaN high-electron-mobility transistors are reviewed. Data from three de-accelerated tests are presented, which demonstrate a close correlation between failure modes and bias point. Maximum degradation was found in "semi-on" conditions, close to the maximum of hot-electron generation which was detected with the aid of electroluminescence (EL) measurements. This suggests a contribution of hot-electron effects to device degradation, at least at moderate drain bias (VDS 30-50 V), new failure mechanisms are triggered, which induce an increase of gate leakage current. The latter is possibly related with the inverse piezoelectric effect leading to defect generation due to strain relaxation, and/or to localized permanent breakdown of the AlGaN barrier layer. Results are compared with literature data throughout the text.

Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

GaN HEMT reliability

Recent advances in materials, manufacturing, biotechnology, and microelectromechanical systems (MEMS) have fostered many exciting biosensors and bioactuators that are based on biocompatible piezoelectric materials. These biodevices can be safely integrated with biological systems for applications such as sensing biological forces, stimulating tissue growth and healing, as well as diagnosing medical problems. Herein, the principles, applications, future opportunities, and challenges of piezoelectric biomaterials for medical uses are reviewed thoroughly. Modern piezoelectric biosensors/bioactuators are developed with new materials and advanced methods in microfabrication/encapsulation to avoid the toxicity of conventional lead-based piezoelectric materials. Intriguingly, some piezoelectric materials are biodegradable in nature, which eliminates the need for invasive implant extraction. Together, these advancements in the field of piezoelectric materials and microsystems can spark a new age in the field of medicine.

Piezoelectric Biomaterials for Sensors and Actuators

Trapping is one of the most deleterious effects that limit performance and reliability in GaN HEMTs. In this paper, we present a methodology to study trapping characteristics in GaN HEMTs that is based on current-transient measurements. Its uniqueness is that it is amenable to integration with electrical stress experiments in long-term reliability studies. We present the details of the measurement and analysis procedures. With this method, we have investigated the trapping and detrapping dynamics of GaN HEMTs. In particular, we examined layer location, energy level, and trapping/detrapping time constants of dominant traps. We have identified several traps inside the AlGaN barrier layer or at the surface close to the gate edge and in the GaN buffer.

http://www.mtl.mit.edu/~alamo/pdf/2011/RJ-128.pdf

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

This paper critically investigates the advantages and limitations of the current-transient methods used for the study of the deep levels in GaN-based high-electron mobility transistors (HEMTs), by evaluating how the procedures adopted for measurement and data analysis can influence the results of the investigation. The article is divided in two parts within Part I. 1) We analyze how the choice of the measurement and analysis parameters (such as the voltage levels used to induce the trapping phenomena and monitor the current transients, the duration of the filling pulses, and the method used for the extrapolation of the time constants of the capture/emission processes) can influence the results of the drain current transient investigation and can provide information on the location of the trap levels responsible for current collapse. 2) We present a database of defects described in more than 60 papers on GaN technology, which can be used to extract information on the nature and origin of the trap levels responsible for current collapse in AlGaN/GaN HEMTs. Within Part II, we investigate how self-heating can modify the results of drain current transient measurements on the basis of combined experimental activity and device simulation.

Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

Reverse-bias testing in AlGaN/GaN HEMTs at high (negative) gate voltage is found to induce a catastrophic increase in gate leakage current IG, with only a slight degradation of drain current ID. Electroluminescence (EL) microscopy demonstrates that leakage current injection is localized within ldquohot spotsrdquo at the gate edges, possibly corresponding to defects in the semiconductor material or at the metal-semiconductor interface. The density of ldquohot spotsrdquo increases during tests and is correlated with the increase of IG and electroluminescence intensity and with an enhancement of trapping effects such as current collapse.

Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing

A long-term 3000-hour test under on-state conditions (VDS =25V, 6W/mm constant dissipated power) and off-state conditions (V DS=46V, VGS=-6V) on GaN/AlGaN/GaN HEMTs is presented Trapping presence and hot-electrons effect are characterized by means of low-frequency techniques (low-frequency noise measurements, transconductance frequency dispersion, gate-lag) The on-state stress shows the most important degradation Since our measurements point out to the creation of traps in the gate-to-drain surface region during the stress, this degradation is ascribed to the effect of hot-electrons

Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress

The physical mechanisms underlying RF current- collapse effects in AlGaN-GaN high-electron-mobility transistors are investigated by means of measurements and numerical device simulations. This paper suggests the following conditions: 1) both surface and buffer traps can contribute to RF current collapse through a similar physical mechanism involving capture and emission of electrons tunneling from the gate; 2) surface passivation strongly mitigates RF current collapse by reducing the surface electric field and inhibiting electron injection into traps; 3) for surface-trap densities lower than 9 x 1012 cm-2, surface-potential barriers in the 1-2-eV range can coexist with surface traps having much a shallower energy and, therefore, inducing RF current-collapse effects characterized by relatively short time constants.

Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors

Failure modes and mechanisms of AlGaN/GaN HEMTs, observed during accelerated tests at various bias conditions are reviewed.

F. Danesin

Papers

Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing

Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress

Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors

A review of failure modes and mechanisms of GaN-based HEMTs