Journal ArticleDOI
Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
Gaudenzio Meneghesso,Giovanni Verzellesi,F. Danesin,Fabiana Rampazzo,Franco Zanon,Augusto Tazzoli,Matteo Meneghini,Enrico Zanoni +7 more
TLDR
In this article, failure modes and mechanisms of AlGaN/GaN high-electron-mobility transistors are reviewed, and data from three de-accelerated tests are presented, which demonstrate a close correlation between failure mode and bias point.Abstract:
Failure modes and mechanisms of AlGaN/GaN high-electron-mobility transistors are reviewed. Data from three de-accelerated tests are presented, which demonstrate a close correlation between failure modes and bias point. Maximum degradation was found in "semi-on" conditions, close to the maximum of hot-electron generation which was detected with the aid of electroluminescence (EL) measurements. This suggests a contribution of hot-electron effects to device degradation, at least at moderate drain bias (VDS 30-50 V), new failure mechanisms are triggered, which induce an increase of gate leakage current. The latter is possibly related with the inverse piezoelectric effect leading to defect generation due to strain relaxation, and/or to localized permanent breakdown of the AlGaN barrier layer. Results are compared with literature data throughout the text.read more
Citations
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Journal ArticleDOI
GaN HEMT reliability
J.A. del Alamo,Jungwoo Joh +1 more
TL;DR: This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress and suggests several paths to enhance the electrical reliability of GaN HEMTs.
Journal ArticleDOI
Piezoelectric Biomaterials for Sensors and Actuators
Meysam T. Chorsi,Eli J. Curry,Hamid T. Chorsi,Ritopa Das,Jeffrey Baroody,Prashant K. Purohit,Horea T. Ilieş,Thanh D. Nguyen +7 more
TL;DR: The principles, applications, future opportunities, and challenges of piezoelectric biomaterials for medical uses are reviewed thoroughly and can spark a new age in the field of medicine.
Journal ArticleDOI
A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors
Jungwoo Joh,J.A. del Alamo +1 more
TL;DR: In this paper, the authors present a methodology to study trapping characteristics in GaN HEMTs that is based on current-transient measurements and identify several traps inside the AlGaN barrier layer or at the surface close to the gate edge and in the GaN buffer.
Journal ArticleDOI
Electronic surface and dielectric interface states on GaN and AlGaN
TL;DR: In this article, the authors summarize the current understanding of the gate leakage current and current collapse mechanisms, where awareness of the surface defects is the key to controlling and improving device performance.
Journal ArticleDOI
Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors
TL;DR: In this paper, the surface morphology of electrically stressed AlGaN/GaN high electron mobility transistors was investigated using atomic force microscopy and scanning electron microscopy after removing the gate metallization by chemical etching.
References
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Journal ArticleDOI
GaN-Based RF Power Devices and Amplifiers
TL;DR: The latest developments of the GaN HEMT technologies, including material growth, processing technologies, device epitaxial structures and MMIC designs, are reviewed to achieve the state-of-the-art microwave and millimeter-wave performance.
Journal ArticleDOI
Slow transients observed in AlGaN/GaN HFETs: effects of SiN/sub x/ passivation and UV illumination
TL;DR: In this article, the surface potential changes are caused by electrons which tunnel from the gate under high bias stress and get trapped at the surface states near the gate, which correlates with a large improvement in microwave power performance in these devices after passivation.
Proceedings ArticleDOI
Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors
Jungwoo Joh,J.A. del Alamo +1 more
TL;DR: In this paper, the authors carried out systematic experiments of the electrical reliability of state-of-the-art GaN HEMTs and found that degradation is mostly driven by electric field and that there is a critical electric field below which negligible degradation is observed.
Proceedings ArticleDOI
Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?
Farid Medjdoub,J.-F. Carlin,M. Gonschorek,Eric Feltin,M. A. Py,Damien Ducatteau,Christophe Gaquiere,Nicolas Grandjean,Erhard Kohn +8 more
TL;DR: The performance of novel AlInN/GaN HEMTs for high power / high temperature applications is discussed in this paper, where the maximum output current density of more than 2 A/mm at room temperature and more than 3 A /mm at 77 K have been obtained even with sapphire substrates.
Journal ArticleDOI
Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs
TL;DR: In this paper, an analysis of ON-state and OFF-state high-electric-field stress results for unpassivated GaN/AlGaN/GaN high-electron-mobility transistors on SiC substrates is presented.