M
Matteo Meneghini
Researcher at University of Padua
Publications - 540
Citations - 11781
Matteo Meneghini is an academic researcher from University of Padua. The author has contributed to research in topics: Gallium nitride & Light-emitting diode. The author has an hindex of 46, co-authored 472 publications receiving 8789 citations. Previous affiliations of Matteo Meneghini include University of California, Santa Barbara & Applied Materials.
Papers
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Journal ArticleDOI
The 2018 GaN power electronics roadmap
Hiroshi Amano,Yannick Baines,Matteo Borga,T Bouchet,Paul R. Chalker,Matthew Charles,Kevin J. Chen,Nadim Chowdhury,Rongming Chu,Carlo De Santi,Maria Merlyne De Souza,Stefaan Decoutere,L. Di Cioccio,Bernd Eckardt,Takashi Egawa,Patrick Fay,Joseph J. Freedsman,Louis J. Guido,Oliver Häberlen,Geoff Haynes,Thomas Heckel,Dilini Hemakumara,Peter A. Houston,Jie Hu,Mengyuan Hua,Qingyun Huang,Alex Q. Huang,Sheng Jiang,Hiroji Kawai,Dan Kinzer,Martin Kuball,Ashwani Kumar,K. B. Lee,Xu Li,Denis Marcon,Martin Marz,Robert McCarthy,Gaudenzio Meneghesso,Matteo Meneghini,Erwan Morvan,Akira Nakajima,Ekkanath Madathil Sankara Narayanan,Stephen Oliver,Tomas Palacios,Daniel Piedra,Marc Plissonnier,Rekha Reddy,Min Sun,Iain G. Thayne,A. Torres,Nicola Trivellin,Vineet Unni,Michael J. Uren,Marleen Van Hove,David J. Wallis,David J. Wallis,Jingshan Wang,Jinqiao Xie,Shuichi Yagi,Shu Yang,Chris Youtsey,Ruiyang Yu,Enrico Zanoni,Stefan Zeltner,Yuhao Zhang +64 more
TL;DR: This collection of GaN technology developments is not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve.
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Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
Gaudenzio Meneghesso,Giovanni Verzellesi,F. Danesin,Fabiana Rampazzo,Franco Zanon,Augusto Tazzoli,Matteo Meneghini,Enrico Zanoni +7 more
TL;DR: In this article, failure modes and mechanisms of AlGaN/GaN high-electron-mobility transistors are reviewed, and data from three de-accelerated tests are presented, which demonstrate a close correlation between failure mode and bias point.
Journal ArticleDOI
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
Giovanni Verzellesi,Davide Saguatti,Matteo Meneghini,Francesco Bertazzi,Michele Goano,Gaudenzio Meneghesso,Enrico Zanoni +6 more
TL;DR: In this article, the authors classified and reviewed the physical mechanisms causing the efficiency droop in InGaN/GaN blue light-emitting diodes and remedies proposed for droop mitigation.
Journal ArticleDOI
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements
Davide Bisi,Matteo Meneghini,Carlo De Santi,Alessandro Chini,Michael Dammann,Peter Brückner,Michael Mikulla,Gaudenzio Meneghesso,Enrico Zanoni +8 more
TL;DR: In this paper, the advantages and limitations of the current-transient methods used for the study of the deep levels in GaN-based high-electron mobility transistors (HEMTs), by evaluating how the procedures adopted for measurement and data analysis can influence the results of the investigation.
Journal ArticleDOI
A Review on the Reliability of GaN-Based LEDs
TL;DR: In this paper, the degradation mechanisms that limit the reliability of GaN-based light-emitting diodes (LEDs) are reviewed, and a set of specific experiments aimed at separately analyzing the degradation of the properties of the active layer, of the ohmic contacts and of the package/phosphor system are presented.