Qualcomm

About: Qualcomm is a company organization based out in Farnborough, United Kingdom. It is known for research contribution in the topics: Wireless & Signal. The organization has 19408 authors who have published 38405 publications receiving 804693 citations. The organization is also known as: Qualcomm Incorporated & Qualcomm, Inc..

Apparatus and method for enhanced in-store shopping services using mobile device

Abstract: Apparatus and methods are provided for offering shopping assistance tools. The tools may be used by developers to create enhanced in-store customer shopping applications. The shopping assistance tools provide in-store navigation, customer assistance, and inventory management services.

A high-performance MIMO OFDM wireless LAN

Abstract: Tremendous consumer interest in multimedia applications is fueling the need for successively higher data rates in wireless networks. Data rates in wireless wide area networks are limited by the need to address wide coverage, vehicular mobility, and the limitations of licensed spectrum. Thus, data rates in WWANs continue to lag advances in wireless local area networks by orders of magnitude. There are valuable lessons to be learned from the design of WLANs that provide data rates in excess of hundreds of megabits per second. Several technologies are instrumental in enabling the future of high-performance WWANs, including multiple transmit and receive antennas, OFDM, closed loop transmission control, and low-latency MAC operation. We describe a MIMO WLAN design and prototype that exploits these attributes to provide data rates in excess of 200 Mb/s above the MAC

Dynamic carrier sensing thresholds

Abstract: Systems and methodologies are described that facilitate communication in a wireless network environment. In particular, access points can dynamically adjust transmit power and/or carrier-sensing thresholds to allow multiple access points to communicate concurrently. In aspects, access points exchange node information, including RSSI and node addresses, of nearby nodes. The node information can be utilized to detect hidden nodes and estimate interference levels. Transmit power and/or carrier-sensing thresholds can be modified as a function of distance between source and destination access points, interference from hidden nodes, transmission rates, and/or path loss.

Through Silicon via Bridge Interconnect

Abstract: An integrated circuit bridge interconnect system includes a first die and a second die provided in a side-by-side configuration and electrically interconnected to each other by a bridge die. The bridge die includes through silicon vias (TSVs) to connect conductive interconnect lines on the bridge die to the first die and the second die. Active circuitry, other than interconnect lines, may be provided on the bridge die. At least one or more additional die may be stacked on the bridge die and interconnected to the bridge die.

A SiGe Terahertz Heterodyne Imaging Transmitter With 3.3 mW Radiated Power and Fully-Integrated Phase-Locked Loop

Abstract: A high-power 320 GHz transmitter using 130 nm SiGe BiCMOS technology ( $f_{T}/f_{\max} =$ 220/280 GHz) is reported. This transmitter consists of a 4 × 4 array of radiators based on coupled harmonic oscillators. By incorporating a signal filter structure called return-path gap coupler into a differential self-feeding oscillator, the proposed 320 GHz radiator simultaneously maximizes the fundamental oscillation power, harmonic generation, as well as on-chip radiation. To facilitate the TX-RX synchronization of a future terahertz (THz) heterodyne imaging chipset, a fully-integrated phase-locked loop (PLL) is also implemented in the transmitter. Such on-chip phase-locking capability is the first demonstration for all THz radiators in silicon. In the far-field measurement, the total radiated power and EIRP of the chip is 3.3 mW and 22.5 dBm, respectively. The transmitter consumes 610 mW DC power, which leads to a DC-to-THz radiation efficiency of 0.54%. To the authors' best knowledge, this work presents the highest radiated power and DC-to-THz radiation efficiency in silicon-based THz radiating sources.