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Antonio Cerdeira
Researcher at CINVESTAV
Publications - 173
Citations - 2741
Antonio Cerdeira is an academic researcher from CINVESTAV. The author has contributed to research in topics: MOSFET & Transistor. The author has an hindex of 23, co-authored 168 publications receiving 2521 citations.
Papers
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Journal ArticleDOI
A review of recent MOSFET threshold voltage extraction methods
TL;DR: Several of the extraction methods currently used to determine the value of threshold voltage from the measured drain current versus gate voltage transfer characteristics, focusing specially on single-crystal bulk MOSFETs are reviewed.
Journal ArticleDOI
Accurate modeling and parameter extraction method for organic TFTs
Magali Estrada,Antonio Cerdeira,Joaquim Puigdollers,L. Resendiz,Josep Pallarès,Lluis F. Marsal,Cristobal Voz,Benjamin Iniguez +7 more
TL;DR: In this article, the authors demonstrate the applicability of the unified model and parameter extraction method (UMEM) to organic thin film transistors, OTFTs, which has been previously used with a-Si:H, polysilicon and nanocrystalline TFTs.
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New procedure for the extraction of basic a-Si:H TFT model parameters in the linear and saturation regions
TL;DR: In this paper, a new procedure is proposed to extract basic parameters for the AIM-Spice amorphous thin film transistor model in the above-threshold region, which avoids non-linear optimization.
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Compact model for short channel symmetric doped double-gate MOSFETs
TL;DR: In this paper, a new compact model for currents in short channel symmetric double-gate MOSFETs is presented which considers a doped silicon layer in the range of concentrations between 10 14 and 3 � 10 18 cm � 3, and the mobile charge density is calculated using analytical expressions obtained from modeling the surface potential and the difference of potentials at the surface and at the center of the Si doped layer without the need to solve any transcendental equations.
Journal ArticleDOI
Mobility model for compact device modeling of OTFTs made with different materials
Magali Estrada,Israel Mejia,Antonio Cerdeira,Josep Pallarès,Lluis F. Marsal,Benjamin Iniguez +5 more
TL;DR: In this article, a new approach to model mobility in organic thin film transistors, OTFTs, is presented, which is used to analyze the behavior of mobility in devices made of poly(methyl methacrylate), PMMA, on poly(3hexylthiophene), P3HT, recently reported by us.