The dielectric properties of tissues have been extracted from the literature of the past five decades and presented in a graphical format. The purpose is to assess the current state of knowledge, expose the gaps there are and provide a basis for the evaluation and analysis of corresponding data from an on-going measurement programme.

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The dielectric properties of biological tissues: I. Literature survey

Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

: Knowledge of the dielectric properties of biological materials is of importance in solving electromagnetic interaction problems. There is, as yet, no consensus on such data among scientists dealing with these issues. This project is geared towards producing a database of dielectric data based on measurements using recently developed techniques. This has been achieved through measurement over a wide frequency range. The new data were evaluated by comparison with corresponding data from the literature where available. To facilitate the incorporation of the dielectric data in numerical solutions, their frequency dependence was modelled to a spectrum characterised by 4 dispersion regions. The conductivity of tissues below 100 Hz was estimated from the recent measurements mitigated by data from the literature and used to estimate the body and of various body parts.

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Compilation of the Dielectric Properties of Body Tissues at RF and Microwave Frequencies.

Steep subthreshold swing transistors based on interband tunneling are examined toward extending the performance of electronics systems. In particular, this review introduces and summarizes progress in the development of the tunnel field-effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges. The promise of the TFET is in its ability to provide higher drive current than the MOSFET as supply voltages approach 0.1 V.

/pdf/low-voltage-tunnel-transistors-for-beyond-cmos-logic-3w5c8knrc5.pdf

Low-Voltage Tunnel Transistors for Beyond CMOS Logic

The use of Forster or fluorescence resonance energy transfer (FRET) as a spectroscopic technique has been in practice for over 50 years. A search of ISI Web of Science with just the acronym "FRET" returns more than 2300 citations from various areas such as structural elucidation of biological molecules and their interactions, in vitro assays, in vivo monitoring in cellular research, nucleic acid analysis, signal transduction, light harvesting and metallic nanomaterials. The advent of new classes of fluorophores including nanocrystals, nanoparticles, polymers, and genetically encoded proteins, in conjunction with ever more sophisticated equipment, has been vital in this development. This review gives a critical overview of the major classes of fluorophore materials that may act as donor, acceptor, or both in a FRET configuration. We focus in particular on the benefits and limitations of these materials and their combinations, as well as the available methods of bioconjugation.

Materials for Fluorescence Resonance Energy Transfer Analysis: Beyond Traditional Donor-Acceptor Combinations

A review of recent MOSFET threshold voltage extraction methods

A new procedure is proposed to extract basic parameters for the AIM-Spice amorphous thin film transistor model in the above-threshold region. Our method avoids non-linear optimization, which is mainly the method utilized up to now, when using a program extractor included in AIM-Spice. The present extraction procedure is based on the integration of the experimental data current. The integration method as in known is convenient to decrease the effects of experimental noise. The method is applied to the linear and saturation regions for the above-threshold regime and allows the extraction of all the above-threshold parameters. The accuracy of the simulated curves using the parameters extracted with the new procedure is verified with measured and calculated data using the expressions contained in the model.

New procedure for the extraction of basic a-Si:H TFT model parameters in the linear and saturation regions

Two useful applications of the Lambert W function to undoped-body MOSFET modeling are presented. Firstly, it is applied to the problem of inverting the gate voltage versus channel surface potential equation. The result is an exact analytical solution of the channel surface potential as an explicit function of the gate voltage for either n or p channel operation. Additionally an approximate but highly accurate analytical solution is presented which is continuously valid for all regions of operation. Secondly, we propose a new unambiguous analytical definition for the threshold voltage of these undoped-body devices. This definition overcomes the impossibility of using the traditional definition based on the bulk Fermi potential, and the ambiguities introduced by other definitions. The threshold voltage is mathematically described also using the Lambert W function at the transition point from subthreshold to superthreshold behavior. An approximation for the )1 branch of the Lambert W function is proposed to express the threshold voltage approximately using elementary logarithmic functions. These new descriptions are then verified against two-dimensional numerical device simulations. 2003 Elsevier Ltd. All rights reserved.

Exact analytical solution of channel surface potential as an explicit function of gate voltage in undoped-body MOSFETs using the Lambert W function and a threshold voltage definition therefrom

http://www.biblioteca.uma.es/bbldoc/tesisuma/1664315x.pdf

Free and sol-gel immobilized alkaline phosphatase-based biosensor for the determination of pesticides and inorganic compounds

http://atarazanas.sci.uma.es/docs/articulos/16694570.pdf

F. García Sánchez

Papers

A review of recent MOSFET threshold voltage extraction methods

New procedure for the extraction of basic a-Si:H TFT model parameters in the linear and saturation regions

Exact analytical solution of channel surface potential as an explicit function of gate voltage in undoped-body MOSFETs using the Lambert W function and a threshold voltage definition therefrom

Free and sol-gel immobilized alkaline phosphatase-based biosensor for the determination of pesticides and inorganic compounds

Hydrogen peroxide assay by using enhanced chemiluminescence of the luminol-H2O2-horseradish peroxidase system: Comparative studies