Magali Estrada

TL;DR: Several of the extraction methods currently used to determine the value of threshold voltage from the measured drain current versus gate voltage transfer characteristics, focusing specially on single-crystal bulk MOSFETs are reviewed.

TL;DR: In this article, the authors demonstrate the applicability of the unified model and parameter extraction method (UMEM) to organic thin film transistors, OTFTs, which has been previously used with a-Si:H, polysilicon and nanocrystalline TFTs.

TL;DR: In this paper, a new procedure is proposed to extract basic parameters for the AIM-Spice amorphous thin film transistor model in the above-threshold region, which avoids non-linear optimization.

TL;DR: In this paper, a new compact model for currents in short channel symmetric double-gate MOSFETs is presented which considers a doped silicon layer in the range of concentrations between 10 14 and 3 � 10 18 cm � 3, and the mobile charge density is calculated using analytical expressions obtained from modeling the surface potential and the difference of potentials at the surface and at the center of the Si doped layer without the need to solve any transcendental equations.

TL;DR: In this article, a new approach to model mobility in organic thin film transistors, OTFTs, is presented, which is used to analyze the behavior of mobility in devices made of poly(methyl methacrylate), PMMA, on poly(3hexylthiophene), P3HT, recently reported by us.