Journal ArticleDOI
A review of recent MOSFET threshold voltage extraction methods
TLDR
Several of the extraction methods currently used to determine the value of threshold voltage from the measured drain current versus gate voltage transfer characteristics, focusing specially on single-crystal bulk MOSFETs are reviewed.About:
This article is published in Microelectronics Reliability.The article was published on 2002-04-01. It has received 813 citations till now. The article focuses on the topics: Subthreshold conduction & Overdrive voltage.read more
Citations
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Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
Journal ArticleDOI
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Alan Seabaugh,Qin Zhang +1 more
TL;DR: This review introduces and summarizes progress in the development of the tunnel field- effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges.
Journal ArticleDOI
MoS2 Field-Effect Transistor for Next-Generation Label-Free Biosensors
TL;DR: This paper introduces and demonstrates FET biosensors based on molybdenum disulfide (MoS2), which provides extremely high sensitivity and at the same time offers easy patternability and device fabrication, due to its 2D atomically layered structure.
Journal ArticleDOI
High-Performance Organic Field-Effect Transistors
Daniele Braga,Gilles Horowitz +1 more
TL;DR: In this article, a review of the state-of-the-art organic field effect transistors is presented, focusing on the problem of parameter extraction, limitations of the performance by the interfaces, which include the dielectric-semiconductor interface, and the injection and retrieval of charge carriers at the source and drain electrodes.
Journal ArticleDOI
SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations
Shinhyun Choi,Scott H. Tan,Zefan Li,Yunjo Kim,Chanyeol Choi,Pai-Yu Chen,Han-Wool Yeon,Shimeng Yu,Jeehwan Kim +8 more
TL;DR: This work demonstrates analog resistive switching devices that possess desired characteristics for neuromorphic computing networks with minimal performance variations using a single-crystalline SiGe layer epitaxially grown on Si as a switching medium.
References
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Book
Semiconductor Material and Device Characterization
TL;DR: In this article, the authors present a characterization of the resistivity of a two-point-versus-four-point probe in terms of the number of contacts and the amount of contacts in the probe.
Journal ArticleDOI
New method for the extraction of MOSFET parameters
TL;DR: In this article, a new method for the extraction of the MOSFET parameters is presented, which relies on combining drain current and transconductance transfer characteristics, enabling reliable values of the threshold voltage V/sub t/, the low field mobility mu /sub 0/ and the mobility attenuation coefficient theta to be obtained.
Proceedings Article
Microelectronics reliability
TL;DR: In this article, the importance of the involvement of the design and manufacturing team in achieving reliability of microelectronic devices is highlighted. And a method of verifying reliability goals through calculation of failure rates based on life test parameters is described.
Journal ArticleDOI
Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET's
TL;DR: In this article, the authors modify the Pao-Sah drain current model to incorporate a mobility model and obtain 3% accuracy from subthreshold to very strong inversion for a wide range of substrate biases.
Journal ArticleDOI
A new 'shift and ratio' method for MOSFET channel-length extraction
Yuan Taur,D.S. Zicherman,D.R. Lombardi,Phillip J. Restle,C.C.-H. Hsu,H.I. Nanafi,M.R. Wordeman,Bijan Davari,Ghavam G. Shahidi +8 more
TL;DR: In this paper, a shift-and-ratio method for channel length extraction is presented, where channel mobility can be any function of gate voltage, and high source-drain resistance does not affect extraction results.