G S Selwyn

TL;DR: In this paper, the physics and chemistry of the plasma jet and other atmospheric pressure sources are reviewed, including transferred arcs, plasma torches, corona discharges, and dielectric barrier discharges.

TL;DR: In this paper, a plasma jet was developed for etching materials at atmospheric pressure and between 100 and C. Gas mixtures containing helium, oxygen and carbon tetrafluoride were passed between an outer, grounded electrode and a centre electrode, which was driven by 13.56 MHz radio frequency power at 50 to 500 W. At a flow rate of, a stable, arc-free discharge was produced.

TL;DR: In this article, a plasma jet was developed which deposits silica films at up to at 760 Torr and 115 to C. The jet operates by feeding oxygen and helium gas between two coaxial electrodes, driven by a 13.56 MHz radio frequency source at 40 to 500 W. Tetraethoxysilane is mixed with the effluent of the plasma jet and directed onto a substrate located 1.7 cm downstream.

TL;DR: Silicon dioxide films were grown using an atmospheric-pressure plasma jet that was produced by flowing oxygen and helium between two coaxial metal electrodes that were driven by 13.56 MHz radio frequency power as discussed by the authors.

TL;DR: In this paper, an atmospheric-pressure plasma jet was used to etch polyimide films at 1.0-8.2μm/min at 760 Torr and between 50 and 250 ˚C.