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Robert F. Hicks

Researcher at University of California, Los Angeles

Publications -  186
Citations -  9072

Robert F. Hicks is an academic researcher from University of California, Los Angeles. The author has contributed to research in topics: Epitaxy & Atmospheric-pressure plasma. The author has an hindex of 45, co-authored 186 publications receiving 8669 citations. Previous affiliations of Robert F. Hicks include University of California, Berkeley & University of California.

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The atmospheric-pressure plasma jet: a review and comparison to other plasma sources

TL;DR: In this paper, the physics and chemistry of the plasma jet and other atmospheric pressure sources are reviewed, including transferred arcs, plasma torches, corona discharges, and dielectric barrier discharges.
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Structure sensitivity of methane oxidation over platinum and palladium

TL;DR: A series of supported platinum and palladium catalysts were tested for methane oxidation at 260 to 370°C, 50 Torr methane, 110 Torr oxygen, 900 Torr helium, and conversions below 2%.
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Discharge phenomena of an atmospheric pressure radio-frequency capacitive plasma source

TL;DR: In this paper, an atmospheric pressure plasma jet (APPJ) operates using rf power and produces a stable homogeneous discharge at atmospheric pressure, which is divided into two regimes, a "normal" operating mode when the discharge is stable and homogeneous, and a "failure" mode when it converts into a filamentary arc.
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Etching materials with an atmospheric-pressure plasma jet

TL;DR: In this paper, a plasma jet was developed for etching materials at atmospheric pressure and between 100 and C. Gas mixtures containing helium, oxygen and carbon tetrafluoride were passed between an outer, grounded electrode and a centre electrode, which was driven by 13.56 MHz radio frequency power at 50 to 500 W. At a flow rate of, a stable, arc-free discharge was produced.
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Deposition of silicon dioxide films with an atmospheric-pressure plasma jet

TL;DR: In this article, a plasma jet was developed which deposits silica films at up to at 760 Torr and 115 to C. The jet operates by feeding oxygen and helium gas between two coaxial electrodes, driven by a 13.56 MHz radio frequency source at 40 to 500 W. Tetraethoxysilane is mixed with the effluent of the plasma jet and directed onto a substrate located 1.7 cm downstream.