Journal ArticleDOI
Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec
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TLDR
In this paper, a 70-nm n-channel tunneling field effect transistor (TFET) with sub-threshold swing (SS) of 52.8 mV/dec at room temperature was demonstrated.Abstract:
We have demonstrated a 70-nm n-channel tunneling field-effect transistor (TFET) which has a subthreshold swing (SS) of 52.8 mV/dec at room temperature. It is the first experimental result that shows a sub-60-mV/dec SS in the silicon-based TFETs. Based on simulation results, the gate oxide and silicon-on-insulator layer thicknesses were scaled down to 2 and 70 nm, respectively. However, the ON/ OFF current ratio of the TFET was still lower than that of the MOSFET. In order to increase the on current further, the following approaches can be considered: reduction of effective gate oxide thickness, increase in the steepness of the gradient of the source to channel doping profile, and utilization of a lower bandgap channel materialread more
Citations
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Journal ArticleDOI
Low-Voltage Tunnel Transistors for Beyond CMOS Logic
Alan Seabaugh,Qin Zhang +1 more
TL;DR: This review introduces and summarizes progress in the development of the tunnel field- effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges.
Journal ArticleDOI
Dual-gated MoS2/WSe2 van der Waals tunnel diodes and transistors.
Tania Roy,Mahmut Tosun,Mahmut Tosun,Xi Cao,Hui Fang,Hui Fang,Der Hsien Lien,Der Hsien Lien,Der Hsien Lien,Peida Zhao,Peida Zhao,Yu Ze Chen,Yu-Lun Chueh,Jing Guo,Ali Javey,Ali Javey +15 more
TL;DR: This work experimentally demonstrate interlayer band-to-band tunneling in vertical MoS2/WSe2 van der Waals (vdW) heterostructures using a dual-gate device architecture with important implications toward the design of atomically thin tunnel transistors.
Journal ArticleDOI
Doping-Less Tunnel Field Effect Transistor: Design and Investigation
TL;DR: In this article, a detailed study of the doping-less tunnel field effect transistor (TFET) on a thin intrinsic silicon film using charge plasma concept was performed using calibrated simulations.
Journal ArticleDOI
Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs
Kuo-Hsing Kao,Anne S. Verhulst,William G. Vandenberghe,Bart Sorée,Guido Groeseneken,K. De Meyer +5 more
TL;DR: In this article, the authors theoretically calculate the parameters A and B of Kane's direct and indirect BTBT models at different tunneling directions for Si, Ge and unstrained Si1-xGex.
Journal ArticleDOI
Tunnel Field-Effect Transistors: Prospects and Challenges
TL;DR: The tunnel field effect transistor (TFET) is considered a future transistor option due to its steep-slope prospects and the resulting advantages in operating at low supply voltage as mentioned in this paper.
References
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Journal ArticleDOI
Band-to-band tunneling in carbon nanotube field-effect transistors.
TL;DR: How the structure of the nanotube is the key enabler of this particular one-dimensional tunneling effect is discussed, which is controlled here by the valence and conduction band edges in a bandpass-filter-like arrangement.
Journal ArticleDOI
Low-subthreshold-swing tunnel transistors
Qin Zhang,Wei Zhao,Alan Seabaugh +2 more
TL;DR: In this paper, the subthreshold swing of field effect interband tunnel transistors is not limited to 60 mV/dec as in the MOSFET, but instead is shown to be sub-60 mv/dec.
Journal ArticleDOI
Complementary tunneling transistor for low power application
Peng-Fei Wang,K. Hilsenbeck,Th. Nirschl,M. Oswald,Ch. Stepper,M. Weis,Doris Schmitt-Landsiedel,Walter Hansch +7 more
TL;DR: In this paper, the complementary Si-based tunneling transistors are investigated in detail, and it is found that the band-to-band tunneling current is controlled by the gate-tosource voltage.
Proceedings ArticleDOI
I-MOS: a novel semiconductor device with a subthreshold slope lower than kT/q
TL;DR: The I-MOS as discussed by the authors uses modulation of the breakdown voltage of a gated p-i-n structure in order to switch from the OFF to the ON state and vice versa.