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Agostino Pirovano
Researcher at Micron Technology
Publications - 117
Citations - 5927
Agostino Pirovano is an academic researcher from Micron Technology. The author has contributed to research in topics: Phase-change memory & Non-volatile memory. The author has an hindex of 36, co-authored 116 publications receiving 5653 citations. Previous affiliations of Agostino Pirovano include Numonyx & STMicroelectronics.
Papers
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Journal ArticleDOI
Electronic switching in phase-change memories
TL;DR: In this article, a detailed investigation of electronic switching in chalcogenide-based phase-change memory devices is presented, and a physical picture of the switching mechanism is proposed.
Proceedings ArticleDOI
Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications
Fabio Pellizzer,Agostino Pirovano,F. Ottogalli,M. Magistretti,M. Scaravaggi,Paola Zuliani,Marina Tosi,A. Benvenuti,P. Besana,S. Cadeo,T. Marangon,R. Morandi,R. Piva,A. Spandre,R. Zonca,Alberto Modelli,Enrico Varesi,Tyler Lowrey,A. Lacaita,Giulio Casagrande,Paolo Cappelletti,Roberto Bez +21 more
TL;DR: In this paper, a novel cell structure for chalcogenide-based nonvolatile phase-change memories is presented, which is fully compatible with an advanced CMOS technology, is highly manufacturable and allows to optimize array density and cell performance.
Journal ArticleDOI
Reliability study of phase-change nonvolatile memories
Agostino Pirovano,Andrea Redaelli,Fabio Pellizzer,F. Ottogalli,Marina Tosi,Daniele Ielmini,Andrea L. Lacaita,Roberto Bez +7 more
TL;DR: A detailed investigation of the reliability aspects in nonvolatile phase-change memories (PCM) is presented, covering the basic aspects related to high density array NVM, i.e., data retention, endurance, program and read disturbs.
Journal ArticleDOI
Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials
TL;DR: In this paper, a detailed investigation of the time evolution for the low-field resistance R/sub off/ and the threshold voltage V/sub th/ in chalcogenide-based phase-change memory devices is presented.
Proceedings ArticleDOI
Scaling analysis of phase-change memory technology
Agostino Pirovano,Andrea L. Lacaita,A. Benvenuti,Fabio Pellizzer,Stephen J. Hudgens,Roberto Bez +5 more
TL;DR: In this article, the scaling capability of chalcogenide-based phase-change memory (PCM) was discussed, showing that the reset current scales down with the device contact area, reaching values as low as 50 /spl mu/A.