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Roberto Bez
Researcher at Micron Technology
Publications - 135
Citations - 7932
Roberto Bez is an academic researcher from Micron Technology. The author has contributed to research in topics: Non-volatile memory & Phase-change memory. The author has an hindex of 37, co-authored 135 publications receiving 7682 citations. Previous affiliations of Roberto Bez include Polytechnic University of Milan & Western Digital.
Papers
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Journal ArticleDOI
Introduction to flash memory
TL;DR: The main reliability issues, such as charge retention and endurance, are discussed, together with an understanding of the basic physical mechanisms responsible and an insight into the multilevel approach, where two bits are stored in the same cell, is presented.
Journal ArticleDOI
Flash memory cells-an overview
TL;DR: Basic operations and charge-injection mechanisms that are most commonly used in actual flash memory cells are reviewed to provide an understanding of the underlying physics and principles in order to appreciate the large number of device structures, processing technologies, and circuit designs presented in the literature.
Journal ArticleDOI
Electronic switching in phase-change memories
TL;DR: In this article, a detailed investigation of electronic switching in chalcogenide-based phase-change memory devices is presented, and a physical picture of the switching mechanism is proposed.
Proceedings ArticleDOI
Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications
Fabio Pellizzer,Agostino Pirovano,F. Ottogalli,M. Magistretti,M. Scaravaggi,Paola Zuliani,Marina Tosi,A. Benvenuti,P. Besana,S. Cadeo,T. Marangon,R. Morandi,R. Piva,A. Spandre,R. Zonca,Alberto Modelli,Enrico Varesi,Tyler Lowrey,A. Lacaita,Giulio Casagrande,Paolo Cappelletti,Roberto Bez +21 more
TL;DR: In this paper, a novel cell structure for chalcogenide-based nonvolatile phase-change memories is presented, which is fully compatible with an advanced CMOS technology, is highly manufacturable and allows to optimize array density and cell performance.
Journal ArticleDOI
Reliability study of phase-change nonvolatile memories
Agostino Pirovano,Andrea Redaelli,Fabio Pellizzer,F. Ottogalli,Marina Tosi,Daniele Ielmini,Andrea L. Lacaita,Roberto Bez +7 more
TL;DR: A detailed investigation of the reliability aspects in nonvolatile phase-change memories (PCM) is presented, covering the basic aspects related to high density array NVM, i.e., data retention, endurance, program and read disturbs.